GaN-Based Light-Emitting Diode With Three-Dimensional Silver Reflectors

We present a simple and robust method to fabricate three-dimensional Ag reflectors on GaN light-emitting diodes (LEDs) using SiO 2 nanospheres as the template. First, the hexagonal arrays of SiO 2 nanosphere monolayer were spun-cast on a benzocyclobutene (BCB) layer, which was prepared on a sapphire...

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Veröffentlicht in:	IEEE photonics technology letters 2009-06, Vol.21 (11), p.700-702
Hauptverfasser:	Kim, B.J., Jung, H., Kim, S.H., Bang, J., Jihyun Kim
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Etching Gallium nitride Gallium nitrides Hemispheres Light emitting diodes light extraction efficiency Light-emitting diodes (LEDs) Nanobioscience Nanospheres reflector Reflectors Rough surfaces Scanning electron microscopy Silicon dioxide Silver Size control Stability Surface roughness
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