Junction Temperature Measurement of InAs Quantum-Dot Laser Diodes by Utilizing Voltage-Temperature Method
Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage- temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that S...
Gespeichert in:
| Veröffentlicht in: | IEEE photonics technology letters 2008-08, Vol.20 (16), p.1354-1356 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1356 |
|---|---|
| container_issue | 16 |
| container_start_page | 1354 |
| container_title | IEEE photonics technology letters |
| container_volume | 20 |
| creator | Jeong, Jung Hwa Kim, Kyoung Chan Lee, Jung Il Kim, Hyun Jae Han, Il Ki |
| description | Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage- temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiN x is more useful than SiO 2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiN x instead of SiO 2 as the insulating layer. As a result, ground state optical power is doubled. |
| doi_str_mv | 10.1109/LPT.2008.926802 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LPT_2008_926802</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4579314</ieee_id><sourcerecordid>2326907221</sourcerecordid><originalsourceid>FETCH-LOGICAL-c234t-a7e405f0785f147dca9bb0919020183aeb92a7b75f444f71d847d732b3f663743</originalsourceid><addsrcrecordid>eNpdkDtPwzAUhSMEElCYGVgsBraU60fieKzKW0WA1LJaTnpTjJK42M5Qfj2pipBgumf4ztHVlyRnFMaUgrqavczHDKAYK5YXwPaSI6oETYFKsT9kGDKlPDtMjkP4AKAi4-IosY99V0XrOjLHdo3exN4jeUIThttiF4mryUM3CeS1N13s2_TaRTIzAT25tm6JgZQbsoi2sV-2W5E310SzwvTvWnx3y5PkoDZNwNOfO0oWtzfz6X06e757mE5macW4iKmRKCCrQRZZTYVcVkaVJSiqgAEtuMFSMSNLmdVCiFrSZTFAkrOS13nOpeCj5HK3u_bus8cQdWtDhU1jOnR90FxkACLbghf_wA_X-274TRc5UwXPFRugqx1UeReCx1qvvW2N32gKeutdD9711rveeR8a57uGRcRfWmRScSr4NwaJfiY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>862983692</pqid></control><display><type>article</type><title>Junction Temperature Measurement of InAs Quantum-Dot Laser Diodes by Utilizing Voltage-Temperature Method</title><source>IEEE Electronic Library (IEL)</source><creator>Jeong, Jung Hwa ; Kim, Kyoung Chan ; Lee, Jung Il ; Kim, Hyun Jae ; Han, Il Ki</creator><creatorcontrib>Jeong, Jung Hwa ; Kim, Kyoung Chan ; Lee, Jung Il ; Kim, Hyun Jae ; Han, Il Ki</creatorcontrib><description>Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage- temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiN x is more useful than SiO 2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiN x instead of SiO 2 as the insulating layer. As a result, ground state optical power is doubled.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2008.926802</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Diodes ; Forward voltage-temperature ( V\hbox{-}T ) method ; High speed optical techniques ; Insulation ; junction temperature ; Land surface temperature ; Plasma temperature ; Quantum dot lasers ; quantum-dot (QD) laser diodes (LDs) ; Silicon compounds ; Stationary state ; Temperature measurement ; Voltage</subject><ispartof>IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1354-1356</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c234t-a7e405f0785f147dca9bb0919020183aeb92a7b75f444f71d847d732b3f663743</citedby><cites>FETCH-LOGICAL-c234t-a7e405f0785f147dca9bb0919020183aeb92a7b75f444f71d847d732b3f663743</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4579314$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4579314$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jeong, Jung Hwa</creatorcontrib><creatorcontrib>Kim, Kyoung Chan</creatorcontrib><creatorcontrib>Lee, Jung Il</creatorcontrib><creatorcontrib>Kim, Hyun Jae</creatorcontrib><creatorcontrib>Han, Il Ki</creatorcontrib><title>Junction Temperature Measurement of InAs Quantum-Dot Laser Diodes by Utilizing Voltage-Temperature Method</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage- temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiN x is more useful than SiO 2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiN x instead of SiO 2 as the insulating layer. As a result, ground state optical power is doubled.</description><subject>Diodes</subject><subject>Forward voltage-temperature ( V\hbox{-}T ) method</subject><subject>High speed optical techniques</subject><subject>Insulation</subject><subject>junction temperature</subject><subject>Land surface temperature</subject><subject>Plasma temperature</subject><subject>Quantum dot lasers</subject><subject>quantum-dot (QD) laser diodes (LDs)</subject><subject>Silicon compounds</subject><subject>Stationary state</subject><subject>Temperature measurement</subject><subject>Voltage</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkDtPwzAUhSMEElCYGVgsBraU60fieKzKW0WA1LJaTnpTjJK42M5Qfj2pipBgumf4ztHVlyRnFMaUgrqavczHDKAYK5YXwPaSI6oETYFKsT9kGDKlPDtMjkP4AKAi4-IosY99V0XrOjLHdo3exN4jeUIThttiF4mryUM3CeS1N13s2_TaRTIzAT25tm6JgZQbsoi2sV-2W5E310SzwvTvWnx3y5PkoDZNwNOfO0oWtzfz6X06e757mE5macW4iKmRKCCrQRZZTYVcVkaVJSiqgAEtuMFSMSNLmdVCiFrSZTFAkrOS13nOpeCj5HK3u_bus8cQdWtDhU1jOnR90FxkACLbghf_wA_X-274TRc5UwXPFRugqx1UeReCx1qvvW2N32gKeutdD9711rveeR8a57uGRcRfWmRScSr4NwaJfiY</recordid><startdate>20080815</startdate><enddate>20080815</enddate><creator>Jeong, Jung Hwa</creator><creator>Kim, Kyoung Chan</creator><creator>Lee, Jung Il</creator><creator>Kim, Hyun Jae</creator><creator>Han, Il Ki</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20080815</creationdate><title>Junction Temperature Measurement of InAs Quantum-Dot Laser Diodes by Utilizing Voltage-Temperature Method</title><author>Jeong, Jung Hwa ; Kim, Kyoung Chan ; Lee, Jung Il ; Kim, Hyun Jae ; Han, Il Ki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c234t-a7e405f0785f147dca9bb0919020183aeb92a7b75f444f71d847d732b3f663743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Diodes</topic><topic>Forward voltage-temperature ( V\hbox{-}T ) method</topic><topic>High speed optical techniques</topic><topic>Insulation</topic><topic>junction temperature</topic><topic>Land surface temperature</topic><topic>Plasma temperature</topic><topic>Quantum dot lasers</topic><topic>quantum-dot (QD) laser diodes (LDs)</topic><topic>Silicon compounds</topic><topic>Stationary state</topic><topic>Temperature measurement</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Jeong, Jung Hwa</creatorcontrib><creatorcontrib>Kim, Kyoung Chan</creatorcontrib><creatorcontrib>Lee, Jung Il</creatorcontrib><creatorcontrib>Kim, Hyun Jae</creatorcontrib><creatorcontrib>Han, Il Ki</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jeong, Jung Hwa</au><au>Kim, Kyoung Chan</au><au>Lee, Jung Il</au><au>Kim, Hyun Jae</au><au>Han, Il Ki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Junction Temperature Measurement of InAs Quantum-Dot Laser Diodes by Utilizing Voltage-Temperature Method</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2008-08-15</date><risdate>2008</risdate><volume>20</volume><issue>16</issue><spage>1354</spage><epage>1356</epage><pages>1354-1356</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage- temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiN x is more useful than SiO 2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiN x instead of SiO 2 as the insulating layer. As a result, ground state optical power is doubled.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2008.926802</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1354-1356 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_LPT_2008_926802 |
| source | IEEE Electronic Library (IEL) |
| subjects | Diodes Forward voltage-temperature ( V\hbox{-}T ) method High speed optical techniques Insulation junction temperature Land surface temperature Plasma temperature Quantum dot lasers quantum-dot (QD) laser diodes (LDs) Silicon compounds Stationary state Temperature measurement Voltage |
| title | Junction Temperature Measurement of InAs Quantum-Dot Laser Diodes by Utilizing Voltage-Temperature Method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T15%3A58%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Junction%20Temperature%20Measurement%20of%20InAs%20Quantum-Dot%20Laser%20Diodes%20by%20Utilizing%20Voltage-Temperature%20Method&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Jeong,%20Jung%20Hwa&rft.date=2008-08-15&rft.volume=20&rft.issue=16&rft.spage=1354&rft.epage=1356&rft.pages=1354-1356&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2008.926802&rft_dat=%3Cproquest_RIE%3E2326907221%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=862983692&rft_id=info:pmid/&rft_ieee_id=4579314&rfr_iscdi=true |