Enhanced Vertical Extraction Efficiency From a Thin-Film InGaN-GaN Light-Emitting Diode Using a 2-D Photonic Crystal and an Omnidirectional Reflector

An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO-SiO omnidirectional reflector on the bottom was fabricated. The device was investigated by performing a series of experiments and numerical computations. Electrolu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE photonics technology letters 2008-05, Vol.20 (10), p.836-838
Hauptverfasser:	Lin, C.H., Yen, H.H., Lai, C.F., Huang, H.W., Chao, C.H., Kuo, H.C., Lu, T.C., Wang, S.C., Leung, K.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chaos Life members Light emitting diodes Light-emitting diode (LED) Microcavities omnidirectional reflector (ODR) Optical surface waves photonic crystal (PC) Photonic crystals Quantum well devices Semiconductor materials Transistors Two dimensional displays
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!