Fuzzy Learning of Talbot Effect Guides Optimal Mask Design for Proximity Field Nanopatterning Lithography
Processing methods used in photonics and nanotechnology possess many limitations restricting their application areas such as high cost, inability to produce fine details, problems with scalability, and long processing time. Proximity field nanopatterning is a lithography method which surpasses these...
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Veröffentlicht in: | IEEE photonics technology letters 2008-05, Vol.20 (10), p.761-763 |
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Sprache: | eng |
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Zusammenfassung: | Processing methods used in photonics and nanotechnology possess many limitations restricting their application areas such as high cost, inability to produce fine details, problems with scalability, and long processing time. Proximity field nanopatterning is a lithography method which surpasses these limitations. By using interference patterns produced by a two-dimensional phase mask, the technique is able to generate a submicron detailed exposure on a millimeter-size slab of light sensitive photopolymer, which is then developed like a photographic plate to reveal three-dimensional interference patterns from the phase mask. While it is possible to use simulations to obtain the interference patterns produced by a phase mask, realizing the mask dimensions necessary for producing a desired interference pattern is analytically challenging due to the intricacies of light interactions involved in producing the final interference pattern. An alternative method is to iteratively optimize the phase mask until the interference patterns obtained converge to the desired pattern. However, depending on the optimization technique used, one either risks a significant probability of failure or requires a prohibitive number of iterations. We argue that an optimization technique that is to take advantage of the physics of the problem using machine learning methods (here fuzzy learning) can lead to competent mask design. This technique is described in this letter. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2008.919511 |