Far-field radiation pattern of red emitting thin-film resonant cavity LEDs
AlGaInP thin-film resonant cavity light-emitting diodes (RCLEDs) show an improved performance compared to standard red emitting RCLEDs. External quantum efficiencies at 650 nm of 23% and 18% with and without encapsulation, respectively, have been obtained for devices showing a maximum emission in th...
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| Veröffentlicht in: | IEEE photonics technology letters 2006-05, Vol.18 (9), p.1052-1054 |
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| container_end_page | 1054 |
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| container_title | IEEE photonics technology letters |
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| creator | Joray, R. Ilegems, M. Stanley, R.P. Schmid, W. Butendeich, R. Wirth, R. Jaeger, A. Streubel, K. |
| description | AlGaInP thin-film resonant cavity light-emitting diodes (RCLEDs) show an improved performance compared to standard red emitting RCLEDs. External quantum efficiencies at 650 nm of 23% and 18% with and without encapsulation, respectively, have been obtained for devices showing a maximum emission in the normal direction. Thanks to the high angle-averaged reflectivity of the bottom hybrid mirror, a strong photon recycling effect occurs in these structures. The decrease of the absorption with increasing injection level reduces photon recycling and increases extraction of lateral guided modes. The redirection of part of the emission from the vertical to the lateral direction with increasing current density is reflected in the evolution of the far-field radiation pattern. |
| doi_str_mv | 10.1109/LPT.2006.873553 |
| format | Article |
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External quantum efficiencies at 650 nm of 23% and 18% with and without encapsulation, respectively, have been obtained for devices showing a maximum emission in the normal direction. Thanks to the high angle-averaged reflectivity of the bottom hybrid mirror, a strong photon recycling effect occurs in these structures. The decrease of the absorption with increasing injection level reduces photon recycling and increases extraction of lateral guided modes. The redirection of part of the emission from the vertical to the lateral direction with increasing current density is reflected in the evolution of the far-field radiation pattern.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2006.873553</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Distributed Bragg reflectors ; Emission ; Emittance ; Encapsulation ; Evolution ; Holes ; Light emitting diodes ; Light-emitting diodes (LEDs) ; Mirrors ; optical planar waveguides ; Optical resonators ; Photons ; Recycling ; Reflectivity ; Resonance ; resonators ; Semiconductor diodes ; spontaneous emission ; Thin films ; thin-film devices ; Transistors</subject><ispartof>IEEE photonics technology letters, 2006-05, Vol.18 (9), p.1052-1054</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c417t-87d0bcfb7aa89ca05422bc855f7f17406b0900beb4b02ece215c2dcbd0b444203</citedby><cites>FETCH-LOGICAL-c417t-87d0bcfb7aa89ca05422bc855f7f17406b0900beb4b02ece215c2dcbd0b444203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1621274$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1621274$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Joray, R.</creatorcontrib><creatorcontrib>Ilegems, M.</creatorcontrib><creatorcontrib>Stanley, R.P.</creatorcontrib><creatorcontrib>Schmid, W.</creatorcontrib><creatorcontrib>Butendeich, R.</creatorcontrib><creatorcontrib>Wirth, R.</creatorcontrib><creatorcontrib>Jaeger, A.</creatorcontrib><creatorcontrib>Streubel, K.</creatorcontrib><title>Far-field radiation pattern of red emitting thin-film resonant cavity LEDs</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>AlGaInP thin-film resonant cavity light-emitting diodes (RCLEDs) show an improved performance compared to standard red emitting RCLEDs. External quantum efficiencies at 650 nm of 23% and 18% with and without encapsulation, respectively, have been obtained for devices showing a maximum emission in the normal direction. Thanks to the high angle-averaged reflectivity of the bottom hybrid mirror, a strong photon recycling effect occurs in these structures. The decrease of the absorption with increasing injection level reduces photon recycling and increases extraction of lateral guided modes. The redirection of part of the emission from the vertical to the lateral direction with increasing current density is reflected in the evolution of the far-field radiation pattern.</description><subject>Distributed Bragg reflectors</subject><subject>Emission</subject><subject>Emittance</subject><subject>Encapsulation</subject><subject>Evolution</subject><subject>Holes</subject><subject>Light emitting diodes</subject><subject>Light-emitting diodes (LEDs)</subject><subject>Mirrors</subject><subject>optical planar waveguides</subject><subject>Optical resonators</subject><subject>Photons</subject><subject>Recycling</subject><subject>Reflectivity</subject><subject>Resonance</subject><subject>resonators</subject><subject>Semiconductor diodes</subject><subject>spontaneous emission</subject><subject>Thin films</subject><subject>thin-film devices</subject><subject>Transistors</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kb1PwzAQxSMEEqUwM7BEDDClPX8lzohKy4ciwVBmy3EccJU4xXaR-t_jKkhIDEz3dPq9pzu9JLlEMEMIynn1up5hgHzGC8IYOUomqKQoA1TQ46ghaoQIO03OvN8AIMoInSTPK-my1uiuSZ1sjAxmsOlWhqCdTYc2dbpJdW9CMPY9DR_GRrjr49oPVtqQKvllwj6tlvf-PDlpZef1xc-cJm-r5XrxmFUvD0-LuypTFBUh40UDtWrrQkpeKgmMYlwrzlhbtPFWyGsoAWpd0xqwVhojpnCj6uiilGIg0-R2zN264XOnfRC98Up3nbR62HnByxzHIF5G8uZfEnNAOeQ8gtd_wM2wczZ-IXieE0ZyRiI0HyHlBu-dbsXWmV66vUAgDhWIWIE4VCDGCqLjanQYrfUvHc_DBSXfxa-BAA</recordid><startdate>20060501</startdate><enddate>20060501</enddate><creator>Joray, R.</creator><creator>Ilegems, M.</creator><creator>Stanley, R.P.</creator><creator>Schmid, W.</creator><creator>Butendeich, R.</creator><creator>Wirth, R.</creator><creator>Jaeger, A.</creator><creator>Streubel, K.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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External quantum efficiencies at 650 nm of 23% and 18% with and without encapsulation, respectively, have been obtained for devices showing a maximum emission in the normal direction. Thanks to the high angle-averaged reflectivity of the bottom hybrid mirror, a strong photon recycling effect occurs in these structures. The decrease of the absorption with increasing injection level reduces photon recycling and increases extraction of lateral guided modes. The redirection of part of the emission from the vertical to the lateral direction with increasing current density is reflected in the evolution of the far-field radiation pattern.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2006.873553</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Distributed Bragg reflectors Emission Emittance Encapsulation Evolution Holes Light emitting diodes Light-emitting diodes (LEDs) Mirrors optical planar waveguides Optical resonators Photons Recycling Reflectivity Resonance resonators Semiconductor diodes spontaneous emission Thin films thin-film devices Transistors |
| title | Far-field radiation pattern of red emitting thin-film resonant cavity LEDs |
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