Characteristics of a multicolor InGaAs-GaAs quantum-dot infrared photodetector
A three-color quantum-dot infrared photodetector has been fabricated and characterized. The active absorption region consists of undoped In/sub 0.4/Ga/sub 0.6/As quantum dots separated by GaAs barriers. Intersublevel transitions of electrons in the quantum dots results in absorption peaks at /spl si...
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| Veröffentlicht in: | IEEE photonics technology letters 2005-01, Vol.17 (1), p.178-180 |
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| container_title | IEEE photonics technology letters |
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| creator | Chakrabarti, S. Su, X.H. Bhattacharya, P. Ariyawansa, G. Perera, A.G.U. |
| description | A three-color quantum-dot infrared photodetector has been fabricated and characterized. The active absorption region consists of undoped In/sub 0.4/Ga/sub 0.6/As quantum dots separated by GaAs barriers. Intersublevel transitions of electrons in the quantum dots results in absorption peaks at /spl sim/3.5, 7.5, and 22 μm. The devices were characterized at 80 K and 120 K. The dark current density is 10/sup -6/ A/cm 2 at 120 K for an applied bias of 1 V. The responsivity and specific detectivity D/sup */ are 0.07 A/W and 4.8×10/sup 10/ cm/spl middot/Hz 1 2//W for the 7.5-μm response at 80 K for an applied bias of 3 V. |
| doi_str_mv | 10.1109/LPT.2004.838295 |
| format | Article |
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The active absorption region consists of undoped In/sub 0.4/Ga/sub 0.6/As quantum dots separated by GaAs barriers. Intersublevel transitions of electrons in the quantum dots results in absorption peaks at /spl sim/3.5, 7.5, and 22 μm. The devices were characterized at 80 K and 120 K. The dark current density is 10/sup -6/ A/cm 2 at 120 K for an applied bias of 1 V. The responsivity and specific detectivity D/sup */ are 0.07 A/W and 4.8×10/sup 10/ cm/spl middot/Hz 1 2//W for the 7.5-μm response at 80 K for an applied bias of 3 V.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2004.838295</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bias ; Dark current ; Density ; Density measurement ; detectivity ; Devices ; Electromagnetic wave absorption ; Electrons ; Extraterrestrial measurements ; Gallium arsenide ; InAs-GaAs ; Infrared ; infrared detector ; Infrared detectors ; Photodetectors ; Quantum dots ; responsivity ; Temperature</subject><ispartof>IEEE photonics technology letters, 2005-01, Vol.17 (1), p.178-180</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-f5df269440275b3a59a9f069a261b707f069d26096b7b35d6f93510e40451cd43</citedby><cites>FETCH-LOGICAL-c386t-f5df269440275b3a59a9f069a261b707f069d26096b7b35d6f93510e40451cd43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1372622$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1372622$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chakrabarti, S.</creatorcontrib><creatorcontrib>Su, X.H.</creatorcontrib><creatorcontrib>Bhattacharya, P.</creatorcontrib><creatorcontrib>Ariyawansa, G.</creatorcontrib><creatorcontrib>Perera, A.G.U.</creatorcontrib><title>Characteristics of a multicolor InGaAs-GaAs quantum-dot infrared photodetector</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>A three-color quantum-dot infrared photodetector has been fabricated and characterized. The active absorption region consists of undoped In/sub 0.4/Ga/sub 0.6/As quantum dots separated by GaAs barriers. Intersublevel transitions of electrons in the quantum dots results in absorption peaks at /spl sim/3.5, 7.5, and 22 μm. The devices were characterized at 80 K and 120 K. The dark current density is 10/sup -6/ A/cm 2 at 120 K for an applied bias of 1 V. The responsivity and specific detectivity D/sup */ are 0.07 A/W and 4.8×10/sup 10/ cm/spl middot/Hz 1 2//W for the 7.5-μm response at 80 K for an applied bias of 3 V.</description><subject>Bias</subject><subject>Dark current</subject><subject>Density</subject><subject>Density measurement</subject><subject>detectivity</subject><subject>Devices</subject><subject>Electromagnetic wave absorption</subject><subject>Electrons</subject><subject>Extraterrestrial measurements</subject><subject>Gallium arsenide</subject><subject>InAs-GaAs</subject><subject>Infrared</subject><subject>infrared detector</subject><subject>Infrared detectors</subject><subject>Photodetectors</subject><subject>Quantum dots</subject><subject>responsivity</subject><subject>Temperature</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhhdRsFbPHrwEL57Szn4meyzF1kJRD_W8bJJdmpJk293NwX9vQgTBy8w78MwwPAg9YlhgDHK5_zwsCABb5DQnkl-hGZYMp4Azdj1kGDLGlN-iuxBOAJhxymbofX3UXpfR-DrEugyJs4lO2r4ZBtc4n-y6rV6FdCzJpddd7Nu0cjGpO-u1N1VyPrroKhNNGZ2_RzdWN8E8_PY5-tq8HtZv6f5ju1uv9mlJcxFTyytLhGQMSMYLqrnU0oKQmghcZJCNuSICpCiygvJKWEk5BsOAcVxWjM7Ry3T37N2lNyGqtg6laRrdGdcHlUtBMJZkJJ__kSfX-254TuVCQp4DEQO0nKDSuxC8sers61b7b4VBjXbVYFeNdtVkd9h4mjZqY8wfTTMiCKE_TTd0Pg</recordid><startdate>200501</startdate><enddate>200501</enddate><creator>Chakrabarti, S.</creator><creator>Su, X.H.</creator><creator>Bhattacharya, P.</creator><creator>Ariyawansa, G.</creator><creator>Perera, A.G.U.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The active absorption region consists of undoped In/sub 0.4/Ga/sub 0.6/As quantum dots separated by GaAs barriers. Intersublevel transitions of electrons in the quantum dots results in absorption peaks at /spl sim/3.5, 7.5, and 22 μm. The devices were characterized at 80 K and 120 K. The dark current density is 10/sup -6/ A/cm 2 at 120 K for an applied bias of 1 V. The responsivity and specific detectivity D/sup */ are 0.07 A/W and 4.8×10/sup 10/ cm/spl middot/Hz 1 2//W for the 7.5-μm response at 80 K for an applied bias of 3 V.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2004.838295</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bias Dark current Density Density measurement detectivity Devices Electromagnetic wave absorption Electrons Extraterrestrial measurements Gallium arsenide InAs-GaAs Infrared infrared detector Infrared detectors Photodetectors Quantum dots responsivity Temperature |
| title | Characteristics of a multicolor InGaAs-GaAs quantum-dot infrared photodetector |
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