A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology

This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers in the J -band. The VVA is manufactured in a 130-nm BiCMOS technology with fT/fmax = 300/500 GHz. The design is based on a distributed T-attenuator architecture. The design methodology aimed...

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Veröffentlicht in:	IEEE microwave and wireless technology letters (Print) 2023-12, Vol.33 (12), p.1622-1625
Hauptverfasser:	Eissa, Mohamed Hussein, Kahmen, Gerhard
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Attenuation Attenuators Broadband Electric potential Frequency measurement Frequency ranges Gain measurement Inductors Insertion loss Millimeter wave devices Millimeter-wave attenuator MIMO systems passive attenuator phased array Silicon Silicon germanium Transmission lines Transmitters variable gain amplifier (VGA) Voltage Wideband Wireless communication
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