A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology
This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers in the J -band. The VVA is manufactured in a 130-nm BiCMOS technology with fT/fmax = 300/500 GHz. The design is based on a distributed T-attenuator architecture. The design methodology aimed...
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| Veröffentlicht in: | IEEE microwave and wireless technology letters (Print) 2023-12, Vol.33 (12), p.1622-1625 |
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| creator | Eissa, Mohamed Hussein Kahmen, Gerhard |
| description | This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers in the J -band. The VVA is manufactured in a 130-nm BiCMOS technology with fT/fmax = 300/500 GHz. The design is based on a distributed T-attenuator architecture. The design methodology aimed to achieve a wide bandwidth (BW) across attenuation states while maintaining low minimum insertion loss (IL) in compact silicon area. Hence, a distributed inductor-based approach is followed rather than the series varistors or transmission line architectures. The VVA is capable of handling Pin up to 18 dBm with a compression of 0.5 dB. A minimum IL of 5.5 dB was measured within a 3-dB BW of 60 GHz (200-260 GHz) across 13 dB of the voltage-controlled attenuation range. The core circuit occupies 0.015 mm2 of silicon area. To the best of the authors' knowledge, this is the first presented VVA at this frequency range suiting very well highly linear wideband VGAs for sub-THz transmitters (TXs). |
| doi_str_mv | 10.1109/LMWT.2023.3325303 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LMWT_2023_3325303</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10299803</ieee_id><sourcerecordid>3092270982</sourcerecordid><originalsourceid>FETCH-LOGICAL-c246t-bcb7135793444182622f46d55fd432f592694798d994214c9b94658424cd76bc3</originalsourceid><addsrcrecordid>eNpNkE1LAzEQhoMoWLQ_QPCw4Dk1mXxtvNVVW6GlB1v1FvYjW7dsNzWbPdRf75YW8TQvzPPOwIPQDSUjSom-n80_liMgwEaMgWCEnaEBKEWxFnF8_pfV5yUatu2GEAJagqRigFbjCAjBIAmeTH-id1eHdG1x4prgXV3bInqq2uCrrAt9Hodgmy4NzkdVE1FGcLONHqtkvnh7SKKlzb8aV7v1_hpdlGnd2uFpXqHVy_MymeLZYvKajGc4By4DzvJMUSaUZpxzGoMEKLkshCgLzqAUGqTmSseF1hwoz3WmuRQxB54XSmY5u0J3x7s777472wazcZ1v-peGEQ2giI6hp-iRyr1rW29Ls_PVNvV7Q4k5CDQHgeYg0JwE9p3bY6ey1v7jQeu4X_8CySFnnw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3092270982</pqid></control><display><type>article</type><title>A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology</title><source>IEEE Electronic Library (IEL)</source><creator>Eissa, Mohamed Hussein ; Kahmen, Gerhard</creator><creatorcontrib>Eissa, Mohamed Hussein ; Kahmen, Gerhard</creatorcontrib><description>This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers in the <inline-formula> <tex-math notation="LaTeX">J </tex-math></inline-formula>-band. The VVA is manufactured in a 130-nm BiCMOS technology with fT/fmax = 300/500 GHz. The design is based on a distributed T-attenuator architecture. The design methodology aimed to achieve a wide bandwidth (BW) across attenuation states while maintaining low minimum insertion loss (IL) in compact silicon area. Hence, a distributed inductor-based approach is followed rather than the series varistors or transmission line architectures. The VVA is capable of handling Pin up to 18 dBm with a compression of 0.5 dB. A minimum IL of 5.5 dB was measured within a 3-dB BW of 60 GHz (200-260 GHz) across 13 dB of the voltage-controlled attenuation range. The core circuit occupies 0.015 mm2 of silicon area. To the best of the authors' knowledge, this is the first presented VVA at this frequency range suiting very well highly linear wideband VGAs for sub-THz transmitters (TXs).</description><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWT.2023.3325303</identifier><identifier>CODEN: IMWTAZ</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Amplifiers ; Attenuation ; Attenuators ; Broadband ; Electric potential ; Frequency measurement ; Frequency ranges ; Gain measurement ; Inductors ; Insertion loss ; Millimeter wave devices ; Millimeter-wave attenuator ; MIMO systems ; passive attenuator ; phased array ; Silicon ; Silicon germanium ; Transmission lines ; Transmitters ; variable gain amplifier (VGA) ; Voltage ; Wideband ; Wireless communication</subject><ispartof>IEEE microwave and wireless technology letters (Print), 2023-12, Vol.33 (12), p.1622-1625</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c246t-bcb7135793444182622f46d55fd432f592694798d994214c9b94658424cd76bc3</cites><orcidid>0000-0003-2674-2240 ; 0000-0001-6232-6979</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10299803$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10299803$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Eissa, Mohamed Hussein</creatorcontrib><creatorcontrib>Kahmen, Gerhard</creatorcontrib><title>A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology</title><title>IEEE microwave and wireless technology letters (Print)</title><addtitle>LMWT</addtitle><description>This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers in the <inline-formula> <tex-math notation="LaTeX">J </tex-math></inline-formula>-band. The VVA is manufactured in a 130-nm BiCMOS technology with fT/fmax = 300/500 GHz. The design is based on a distributed T-attenuator architecture. The design methodology aimed to achieve a wide bandwidth (BW) across attenuation states while maintaining low minimum insertion loss (IL) in compact silicon area. Hence, a distributed inductor-based approach is followed rather than the series varistors or transmission line architectures. The VVA is capable of handling Pin up to 18 dBm with a compression of 0.5 dB. A minimum IL of 5.5 dB was measured within a 3-dB BW of 60 GHz (200-260 GHz) across 13 dB of the voltage-controlled attenuation range. The core circuit occupies 0.015 mm2 of silicon area. To the best of the authors' knowledge, this is the first presented VVA at this frequency range suiting very well highly linear wideband VGAs for sub-THz transmitters (TXs).</description><subject>Amplifiers</subject><subject>Attenuation</subject><subject>Attenuators</subject><subject>Broadband</subject><subject>Electric potential</subject><subject>Frequency measurement</subject><subject>Frequency ranges</subject><subject>Gain measurement</subject><subject>Inductors</subject><subject>Insertion loss</subject><subject>Millimeter wave devices</subject><subject>Millimeter-wave attenuator</subject><subject>MIMO systems</subject><subject>passive attenuator</subject><subject>phased array</subject><subject>Silicon</subject><subject>Silicon germanium</subject><subject>Transmission lines</subject><subject>Transmitters</subject><subject>variable gain amplifier (VGA)</subject><subject>Voltage</subject><subject>Wideband</subject><subject>Wireless communication</subject><issn>2771-957X</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE1LAzEQhoMoWLQ_QPCw4Dk1mXxtvNVVW6GlB1v1FvYjW7dsNzWbPdRf75YW8TQvzPPOwIPQDSUjSom-n80_liMgwEaMgWCEnaEBKEWxFnF8_pfV5yUatu2GEAJagqRigFbjCAjBIAmeTH-id1eHdG1x4prgXV3bInqq2uCrrAt9Hodgmy4NzkdVE1FGcLONHqtkvnh7SKKlzb8aV7v1_hpdlGnd2uFpXqHVy_MymeLZYvKajGc4By4DzvJMUSaUZpxzGoMEKLkshCgLzqAUGqTmSseF1hwoz3WmuRQxB54XSmY5u0J3x7s777472wazcZ1v-peGEQ2giI6hp-iRyr1rW29Ls_PVNvV7Q4k5CDQHgeYg0JwE9p3bY6ey1v7jQeu4X_8CySFnnw</recordid><startdate>20231201</startdate><enddate>20231201</enddate><creator>Eissa, Mohamed Hussein</creator><creator>Kahmen, Gerhard</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2674-2240</orcidid><orcidid>https://orcid.org/0000-0001-6232-6979</orcidid></search><sort><creationdate>20231201</creationdate><title>A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology</title><author>Eissa, Mohamed Hussein ; Kahmen, Gerhard</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-bcb7135793444182622f46d55fd432f592694798d994214c9b94658424cd76bc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Amplifiers</topic><topic>Attenuation</topic><topic>Attenuators</topic><topic>Broadband</topic><topic>Electric potential</topic><topic>Frequency measurement</topic><topic>Frequency ranges</topic><topic>Gain measurement</topic><topic>Inductors</topic><topic>Insertion loss</topic><topic>Millimeter wave devices</topic><topic>Millimeter-wave attenuator</topic><topic>MIMO systems</topic><topic>passive attenuator</topic><topic>phased array</topic><topic>Silicon</topic><topic>Silicon germanium</topic><topic>Transmission lines</topic><topic>Transmitters</topic><topic>variable gain amplifier (VGA)</topic><topic>Voltage</topic><topic>Wideband</topic><topic>Wireless communication</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Eissa, Mohamed Hussein</creatorcontrib><creatorcontrib>Kahmen, Gerhard</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless technology letters (Print)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Eissa, Mohamed Hussein</au><au>Kahmen, Gerhard</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology</atitle><jtitle>IEEE microwave and wireless technology letters (Print)</jtitle><stitle>LMWT</stitle><date>2023-12-01</date><risdate>2023</risdate><volume>33</volume><issue>12</issue><spage>1622</spage><epage>1625</epage><pages>1622-1625</pages><issn>2771-957X</issn><eissn>2771-9588</eissn><coden>IMWTAZ</coden><abstract>This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers in the <inline-formula> <tex-math notation="LaTeX">J </tex-math></inline-formula>-band. The VVA is manufactured in a 130-nm BiCMOS technology with fT/fmax = 300/500 GHz. The design is based on a distributed T-attenuator architecture. The design methodology aimed to achieve a wide bandwidth (BW) across attenuation states while maintaining low minimum insertion loss (IL) in compact silicon area. Hence, a distributed inductor-based approach is followed rather than the series varistors or transmission line architectures. The VVA is capable of handling Pin up to 18 dBm with a compression of 0.5 dB. A minimum IL of 5.5 dB was measured within a 3-dB BW of 60 GHz (200-260 GHz) across 13 dB of the voltage-controlled attenuation range. The core circuit occupies 0.015 mm2 of silicon area. To the best of the authors' knowledge, this is the first presented VVA at this frequency range suiting very well highly linear wideband VGAs for sub-THz transmitters (TXs).</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/LMWT.2023.3325303</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-2674-2240</orcidid><orcidid>https://orcid.org/0000-0001-6232-6979</orcidid></addata></record> |
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| ispartof | IEEE microwave and wireless technology letters (Print), 2023-12, Vol.33 (12), p.1622-1625 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Attenuation Attenuators Broadband Electric potential Frequency measurement Frequency ranges Gain measurement Inductors Insertion loss Millimeter wave devices Millimeter-wave attenuator MIMO systems passive attenuator phased array Silicon Silicon germanium Transmission lines Transmitters variable gain amplifier (VGA) Voltage Wideband Wireless communication |
| title | A 200-260-GHz Voltage-Controlled Distributed Attenuator in 130-nm BiCMOS:C Technology |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T13%3A33%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20200-260-GHz%20Voltage-Controlled%20Distributed%20Attenuator%20in%20130-nm%20BiCMOS:C%20Technology&rft.jtitle=IEEE%20microwave%20and%20wireless%20technology%20letters%20(Print)&rft.au=Eissa,%20Mohamed%20Hussein&rft.date=2023-12-01&rft.volume=33&rft.issue=12&rft.spage=1622&rft.epage=1625&rft.pages=1622-1625&rft.issn=2771-957X&rft.eissn=2771-9588&rft.coden=IMWTAZ&rft_id=info:doi/10.1109/LMWT.2023.3325303&rft_dat=%3Cproquest_RIE%3E3092270982%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3092270982&rft_id=info:pmid/&rft_ieee_id=10299803&rfr_iscdi=true |