New Formulation of Cardiff Behavioral Model Including DC Bias Voltage Dependence

New Formulation of Cardiff Behavioral Model Including DC Bias Voltage Dependence

A new mathematical formulation for the Cardiff nonlinear behavioral model is presented in this work which includes the dc bias voltages (drain and gate) into the model. It has been verified by modeling a GaN on SiC high electron mobility transistor (HEMT) at 3.5 GHz. For the case presented, interpol...

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Veröffentlicht in:IEEE microwave and wireless components letters 2022-06, Vol.32 (6), p.607-610
Hauptverfasser: Azad, Ehsan M, Bell, James J, Quaglia, Roberto, Rubio, Jorge J Moreno, Tasker, Paul J
Format: Artikel
Sprache:eng
Schlagworte:
Behavioral model
Bias
Data models
High electron mobility transistors
Interpolation
Load modeling
load–pull
Logic gates
Mathematical models
nonlinear device modeling
power amplifier
Radio frequency
Semiconductor devices
Solid modeling
Voltage measurement
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Beschreibung
Zusammenfassung:A new mathematical formulation for the Cardiff nonlinear behavioral model is presented in this work which includes the dc bias voltages (drain and gate) into the model. It has been verified by modeling a GaN on SiC high electron mobility transistor (HEMT) at 3.5 GHz. For the case presented, interpolation of load-pull data has resulted in a more than 90% reduction in the density of the load-pull data required to generate a nonlinear behavioral model over a wide range of dc bias points.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2022.3140653