Phase Change Material (PCM) RF Switches With Integrated Decoupling Bias Circuit
This letter presents the implementation of an integrated bias circuit for controlling the heating and cooling of a phase-change material (PCM) switch. By integrating a parallel bias capacitance to ground on the heater circuit, we show that the proposed design reduces the influence of bias probes on...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2022-01, Vol.32 (1), p.52-55 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Bettoumi, Ines Le Gall, Nicolas Blondy, Pierre |
| description | This letter presents the implementation of an integrated bias circuit for controlling the heating and cooling of a phase-change material (PCM) switch. By integrating a parallel bias capacitance to ground on the heater circuit, we show that the proposed design reduces the influence of bias probes on the switch response. The measured insertion loss is less than 1 dB up to 28 GHz, and we experimentally show that this switch circuit improves isolation by more than 8.5 dB, as expected from simulations. |
| doi_str_mv | 10.1109/LMWC.2021.3114325 |
| format | Article |
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By integrating a parallel bias capacitance to ground on the heater circuit, we show that the proposed design reduces the influence of bias probes on the switch response. The measured insertion loss is less than 1 dB up to 28 GHz, and we experimentally show that this switch circuit improves isolation by more than 8.5 dB, as expected from simulations.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2021.3114325</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bias ; Capacitance ; Circuit design ; Decoupling ; Germanium telluride (GeTe) ; Insertion loss ; Layout ; Optical switches ; Phase change materials ; phase-change material (PCM) ; Radio frequency ; Resistance ; Resistance heating ; RF switches ; Switches</subject><ispartof>IEEE microwave and wireless components letters, 2022-01, Vol.32 (1), p.52-55</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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By integrating a parallel bias capacitance to ground on the heater circuit, we show that the proposed design reduces the influence of bias probes on the switch response. The measured insertion loss is less than 1 dB up to 28 GHz, and we experimentally show that this switch circuit improves isolation by more than 8.5 dB, as expected from simulations.</description><subject>Bias</subject><subject>Capacitance</subject><subject>Circuit design</subject><subject>Decoupling</subject><subject>Germanium telluride (GeTe)</subject><subject>Insertion loss</subject><subject>Layout</subject><subject>Optical switches</subject><subject>Phase change materials</subject><subject>phase-change material (PCM)</subject><subject>Radio frequency</subject><subject>Resistance</subject><subject>Resistance heating</subject><subject>RF switches</subject><subject>Switches</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LwzAUhoMoOKc_QLwJeKMXnTlNsjaXWp0ONjb8YJchpqdrxmxn0iL-e1snXp2Xw_OeAw8h58BGAEzdzOarbBSzGEYcQPBYHpABSJlGkIzFYZ85RMCZOiYnIWwYA5EKGJDFsjQBaVaaao10bhr0zmzp1TKbX9PnCX35co0tMdCVa0o6rRpc-w7K6T3aut1tXbWmd84EmjlvW9eckqPCbAOe_c0heZs8vGZP0WzxOM1uZ5GNFW-iHBnntpCskBaR5ypPE5YncWogjlVq4Z0VRig5BmYKnnKQqFS3S7jJWSJSPiSX-7s7X3-2GBq9qVtfdS91PIZEKCZ-KdhT1tcheCz0zrsP4781MN1707033XvTf966zsW-4xDxn1dSqoQz_gOVdmcF</recordid><startdate>202201</startdate><enddate>202201</enddate><creator>Bettoumi, Ines</creator><creator>Le Gall, Nicolas</creator><creator>Blondy, Pierre</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5439-5069</orcidid></search><sort><creationdate>202201</creationdate><title>Phase Change Material (PCM) RF Switches With Integrated Decoupling Bias Circuit</title><author>Bettoumi, Ines ; Le Gall, Nicolas ; Blondy, Pierre</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-de033cf50f5cee3d9d870d728a12298c1b0fa495610af38315e99b0f73ad07483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Bias</topic><topic>Capacitance</topic><topic>Circuit design</topic><topic>Decoupling</topic><topic>Germanium telluride (GeTe)</topic><topic>Insertion loss</topic><topic>Layout</topic><topic>Optical switches</topic><topic>Phase change materials</topic><topic>phase-change material (PCM)</topic><topic>Radio frequency</topic><topic>Resistance</topic><topic>Resistance heating</topic><topic>RF switches</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bettoumi, Ines</creatorcontrib><creatorcontrib>Le Gall, Nicolas</creatorcontrib><creatorcontrib>Blondy, Pierre</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bettoumi, Ines</au><au>Le Gall, Nicolas</au><au>Blondy, Pierre</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phase Change Material (PCM) RF Switches With Integrated Decoupling Bias Circuit</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2022-01</date><risdate>2022</risdate><volume>32</volume><issue>1</issue><spage>52</spage><epage>55</epage><pages>52-55</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter presents the implementation of an integrated bias circuit for controlling the heating and cooling of a phase-change material (PCM) switch. By integrating a parallel bias capacitance to ground on the heater circuit, we show that the proposed design reduces the influence of bias probes on the switch response. The measured insertion loss is less than 1 dB up to 28 GHz, and we experimentally show that this switch circuit improves isolation by more than 8.5 dB, as expected from simulations.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2021.3114325</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-5439-5069</orcidid></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2022-01, Vol.32 (1), p.52-55 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bias Capacitance Circuit design Decoupling Germanium telluride (GeTe) Insertion loss Layout Optical switches Phase change materials phase-change material (PCM) Radio frequency Resistance Resistance heating RF switches Switches |
| title | Phase Change Material (PCM) RF Switches With Integrated Decoupling Bias Circuit |
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