D-Band SiGe BiCMOS Power Amplifier With 16.8dBm P₁dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages

This letter presents single-ended and differential D -band power amplifiers (PAs) in 55nm SiGe BiCMOS technology. The proposed PAs exploit the remarkable features of common-base stages for rising the power efficiency, i.e., 1) higher breakdown voltage; 2) sharp compression profile due to the enhanc...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2021-03, Vol.31 (3), p.288-291
Hauptverfasser:	Petricli, Ibrahim, Riccardi, Domenico, Mazzanti, Andrea
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">D -band Amplifier BiCMOS integrated circuits Clamping common base (CB) Gain Linearity millimeter-wave integrated circuits power amplifier (PA) Power amplifiers Power efficiency Power generation Silicon Silicon germanides Silicon germanium Transistors Wireless communication
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