60 GHz SiGe:C HBT Power Amplifier With 17.4 dBm Output Power and 16.3% PAE
Single stage cascode power amplifier for 60 GHz band is presented in this letter. Modeling methodology, together with effects of (im)proper local interconnect modeling on achievable output power is discussed. Design partitioning is proposed to reduce the complexity of EM models, while retaining the...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2012-04, Vol.22 (4), p.194-196 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Grujic, D. Savic, M. Bingol, C. Saranovac, L. |
| description | Single stage cascode power amplifier for 60 GHz band is presented in this letter. Modeling methodology, together with effects of (im)proper local interconnect modeling on achievable output power is discussed. Design partitioning is proposed to reduce the complexity of EM models, while retaining the accuracy of simulation. Test chip was fabricated in a 0.25 μm BiCMOS SiGe:C HBT technology with 200/200 GHz, and measured on-wafer. Measurement results are in close agreement with simulation, validating our modeling approach. Saturated output power of 17.4 dBm and peak PAE of 16.3% was measured at 61.5 GHz. Small signal measurements indicate that the PA covers the whole unlicensed 60 GHz band. |
| doi_str_mv | 10.1109/LMWC.2012.2188623 |
| format | Article |
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Modeling methodology, together with effects of (im)proper local interconnect modeling on achievable output power is discussed. Design partitioning is proposed to reduce the complexity of EM models, while retaining the accuracy of simulation. Test chip was fabricated in a 0.25 μm BiCMOS SiGe:C HBT technology with 200/200 GHz, and measured on-wafer. Measurement results are in close agreement with simulation, validating our modeling approach. Saturated output power of 17.4 dBm and peak PAE of 16.3% was measured at 61.5 GHz. Small signal measurements indicate that the PA covers the whole unlicensed 60 GHz band.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2012.2188623</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>60 GHz ; Amplifiers ; Applied sciences ; Chip formation ; Chips ; Circuit properties ; Computer simulation ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Heterojunction bipolar transistors ; Impedance matching ; Integrated circuit interconnections ; Integrated circuit modeling ; Integrated circuits ; Microwaves ; Partitioning ; power amplifier (PA) ; Power amplifiers ; Power generation ; Semiconductor device measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiGe:C HBT ; Signal measurement ; Single stage</subject><ispartof>IEEE microwave and wireless components letters, 2012-04, Vol.22 (4), p.194-196</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-c4e55e277da3160b435e74c1f8046667348741b5047c9761f355b7274fb3c48c3</citedby><cites>FETCH-LOGICAL-c355t-c4e55e277da3160b435e74c1f8046667348741b5047c9761f355b7274fb3c48c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6171878$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6171878$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25862408$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Grujic, D.</creatorcontrib><creatorcontrib>Savic, M.</creatorcontrib><creatorcontrib>Bingol, C.</creatorcontrib><creatorcontrib>Saranovac, L.</creatorcontrib><title>60 GHz SiGe:C HBT Power Amplifier With 17.4 dBm Output Power and 16.3% PAE</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>Single stage cascode power amplifier for 60 GHz band is presented in this letter. Modeling methodology, together with effects of (im)proper local interconnect modeling on achievable output power is discussed. Design partitioning is proposed to reduce the complexity of EM models, while retaining the accuracy of simulation. Test chip was fabricated in a 0.25 μm BiCMOS SiGe:C HBT technology with 200/200 GHz, and measured on-wafer. Measurement results are in close agreement with simulation, validating our modeling approach. Saturated output power of 17.4 dBm and peak PAE of 16.3% was measured at 61.5 GHz. Small signal measurements indicate that the PA covers the whole unlicensed 60 GHz band.</description><subject>60 GHz</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Chip formation</subject><subject>Chips</subject><subject>Circuit properties</subject><subject>Computer simulation</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Heterojunction bipolar transistors</subject><subject>Impedance matching</subject><subject>Integrated circuit interconnections</subject><subject>Integrated circuit modeling</subject><subject>Integrated circuits</subject><subject>Microwaves</subject><subject>Partitioning</subject><subject>power amplifier (PA)</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Semiconductor device measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiGe:C HBT</subject><subject>Signal measurement</subject><subject>Single stage</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLw0AUhYMoWKs_QNwMguAmce68464NtVUqLVjpMiTTCabkZSZB9Neb2NCFq3vgfudwOI5zDdgDwP7D8nUbeAQD8QgoJQg9cUbAuXJBCnbaawouUOyfOxfW7jEGphiMnBeB0Xzxg97SuXkM0GK6Qevyy9RokldZmqSd2qbNBwLpMbSb5mjVNlXbDFBU7BAIj96h9WR26ZwlUWbN1XDHzvvTbBMs3OVq_hxMlq6mnDeuZoZzQ6TcRRQEjhnlRjINicJMCCEpU5JBzDGT2pcCks4VSyJZElPNlKZj5_6QW9XlZ2tsE-ap1SbLosKUrQ0BE6J8UFJ16O0_dF-2ddG1C32fKl8yQjsIDpCuS2trk4RVneZR_d0lhf24YT9u2I8bDuN2nrshOLI6ypI6KnRqj0bCO4rhvsDNgUuNMce3APlX7xciUHsh</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Grujic, D.</creator><creator>Savic, M.</creator><creator>Bingol, C.</creator><creator>Saranovac, L.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20120401</creationdate><title>60 GHz SiGe:C HBT Power Amplifier With 17.4 dBm Output Power and 16.3% PAE</title><author>Grujic, D. ; Savic, M. ; Bingol, C. ; Saranovac, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-c4e55e277da3160b435e74c1f8046667348741b5047c9761f355b7274fb3c48c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>60 GHz</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Chip formation</topic><topic>Chips</topic><topic>Circuit properties</topic><topic>Computer simulation</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Heterojunction bipolar transistors</topic><topic>Impedance matching</topic><topic>Integrated circuit interconnections</topic><topic>Integrated circuit modeling</topic><topic>Integrated circuits</topic><topic>Microwaves</topic><topic>Partitioning</topic><topic>power amplifier (PA)</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Semiconductor device measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SiGe:C HBT</topic><topic>Signal measurement</topic><topic>Single stage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Grujic, D.</creatorcontrib><creatorcontrib>Savic, M.</creatorcontrib><creatorcontrib>Bingol, C.</creatorcontrib><creatorcontrib>Saranovac, L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Grujic, D.</au><au>Savic, M.</au><au>Bingol, C.</au><au>Saranovac, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>60 GHz SiGe:C HBT Power Amplifier With 17.4 dBm Output Power and 16.3% PAE</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2012-04-01</date><risdate>2012</risdate><volume>22</volume><issue>4</issue><spage>194</spage><epage>196</epage><pages>194-196</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>Single stage cascode power amplifier for 60 GHz band is presented in this letter. Modeling methodology, together with effects of (im)proper local interconnect modeling on achievable output power is discussed. Design partitioning is proposed to reduce the complexity of EM models, while retaining the accuracy of simulation. Test chip was fabricated in a 0.25 μm BiCMOS SiGe:C HBT technology with 200/200 GHz, and measured on-wafer. Measurement results are in close agreement with simulation, validating our modeling approach. Saturated output power of 17.4 dBm and peak PAE of 16.3% was measured at 61.5 GHz. Small signal measurements indicate that the PA covers the whole unlicensed 60 GHz band.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2012.2188623</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2012-04, Vol.22 (4), p.194-196 |
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| source | IEEE Electronic Library (IEL) |
| subjects | 60 GHz Amplifiers Applied sciences Chip formation Chips Circuit properties Computer simulation Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Heterojunction bipolar transistors Impedance matching Integrated circuit interconnections Integrated circuit modeling Integrated circuits Microwaves Partitioning power amplifier (PA) Power amplifiers Power generation Semiconductor device measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe:C HBT Signal measurement Single stage |
| title | 60 GHz SiGe:C HBT Power Amplifier With 17.4 dBm Output Power and 16.3% PAE |
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