A Parallel-Segmented Monolithic Step-Up Transformer
This letter proposes a parallel-segmentation method of a step-up transformer that simultaneously improves the impedance transformation ratio and passive efficiency. A corresponding scalable segmentation-based model is also developed on a silicon substrate case. Implementation of the proposed transfo...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2011-09, Vol.21 (9), p.468-470 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Ockgoo Lee Kyu Hwan An Chang-Ho Lee Laskar, J. |
| description | This letter proposes a parallel-segmentation method of a step-up transformer that simultaneously improves the impedance transformation ratio and passive efficiency. A corresponding scalable segmentation-based model is also developed on a silicon substrate case. Implementation of the proposed transformer using 0.18 μm CMOS technology successfully demonstrated impedance transformation from 50 Ω to 5.3 Ω with a minimum insertion loss of 1.52 dB at 1.7 GHz. Self-inductance of 1.4 and 4.8 nH, and quality factor of 7.6 and 6.8, were obtained for primary and secondary windings, respectively. Results of the measurement of the transformer show high agreement with the proposed model and verify the accuracy of the physical behavior of the model within the frequency of interest. |
| doi_str_mv | 10.1109/LMWC.2011.2161976 |
| format | Article |
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A corresponding scalable segmentation-based model is also developed on a silicon substrate case. Implementation of the proposed transformer using 0.18 μm CMOS technology successfully demonstrated impedance transformation from 50 Ω to 5.3 Ω with a minimum insertion loss of 1.52 dB at 1.7 GHz. Self-inductance of 1.4 and 4.8 nH, and quality factor of 7.6 and 6.8, were obtained for primary and secondary windings, respectively. Results of the measurement of the transformer show high agreement with the proposed model and verify the accuracy of the physical behavior of the model within the frequency of interest.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2011.2161976</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Circuit properties ; CMOS ; CMOS integrated circuits ; Coils (windings) ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Equivalent-circuit model ; Exact sciences and technology ; Impedance ; impedance transformation ; Insertion loss ; Integrated circuit modeling ; Integrated circuits ; Microwaves ; Noise levels ; passive efficiency ; power amplifier (PA) ; Q factor ; Quality factor ; Semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors ; Transformations ; transformer ; Transformers ; Windings</subject><ispartof>IEEE microwave and wireless components letters, 2011-09, Vol.21 (9), p.468-470</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Sep 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-48b6806d421c9def3ad89e0c82db543bcb5d56f95c189a2319b6e4781d89ca673</citedby><cites>FETCH-LOGICAL-c354t-48b6806d421c9def3ad89e0c82db543bcb5d56f95c189a2319b6e4781d89ca673</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5982094$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5982094$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24522828$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ockgoo Lee</creatorcontrib><creatorcontrib>Kyu Hwan An</creatorcontrib><creatorcontrib>Chang-Ho Lee</creatorcontrib><creatorcontrib>Laskar, J.</creatorcontrib><title>A Parallel-Segmented Monolithic Step-Up Transformer</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter proposes a parallel-segmentation method of a step-up transformer that simultaneously improves the impedance transformation ratio and passive efficiency. A corresponding scalable segmentation-based model is also developed on a silicon substrate case. Implementation of the proposed transformer using 0.18 μm CMOS technology successfully demonstrated impedance transformation from 50 Ω to 5.3 Ω with a minimum insertion loss of 1.52 dB at 1.7 GHz. Self-inductance of 1.4 and 4.8 nH, and quality factor of 7.6 and 6.8, were obtained for primary and secondary windings, respectively. Results of the measurement of the transformer show high agreement with the proposed model and verify the accuracy of the physical behavior of the model within the frequency of interest.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>Coils (windings)</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Equivalent-circuit model</subject><subject>Exact sciences and technology</subject><subject>Impedance</subject><subject>impedance transformation</subject><subject>Insertion loss</subject><subject>Integrated circuit modeling</subject><subject>Integrated circuits</subject><subject>Microwaves</subject><subject>Noise levels</subject><subject>passive efficiency</subject><subject>power amplifier (PA)</subject><subject>Q factor</subject><subject>Quality factor</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal convertors</subject><subject>Transformations</subject><subject>transformer</subject><subject>Transformers</subject><subject>Windings</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhoMoWKs_QLwEQTyl7uxXdo-l-AUtCm3xuGw2E03Jl7vpwX9vQosHTzMwz_syPFF0DWQGQPTDcvWxmFECMKMgQafyJJqAECqBVPLTcWeQACP6PLoIYUcIcMVhErF5_G69rSqskjV-1tj0mMertmmrsv8qXbzusUu2XbzxtglF62v0l9FZYauAV8c5jbZPj5vFS7J8e35dzJeJY4L3CVeZVETmnILTORbM5kojcYrmmeAsc5nIhSy0cKC0pQx0JpGnCgbMWZmyaXR_6O18-73H0Ju6DA6ryjbY7oPRVFJFlVYDefuP3LV73wzPGaXSVBCh5ADBAXK-DcFjYTpf1tb_GCBmlGhGiWaUaI4Sh8zdsdgGZ6tikODK8BekXNDxhYG7OXAlIv6dhVaUaM5-AQ_seKQ</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Ockgoo Lee</creator><creator>Kyu Hwan An</creator><creator>Chang-Ho Lee</creator><creator>Laskar, J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20110901</creationdate><title>A Parallel-Segmented Monolithic Step-Up Transformer</title><author>Ockgoo Lee ; Kyu Hwan An ; Chang-Ho Lee ; Laskar, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-48b6806d421c9def3ad89e0c82db543bcb5d56f95c189a2319b6e4781d89ca673</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>Coils (windings)</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Equivalent-circuit model</topic><topic>Exact sciences and technology</topic><topic>Impedance</topic><topic>impedance transformation</topic><topic>Insertion loss</topic><topic>Integrated circuit modeling</topic><topic>Integrated circuits</topic><topic>Microwaves</topic><topic>Noise levels</topic><topic>passive efficiency</topic><topic>power amplifier (PA)</topic><topic>Q factor</topic><topic>Quality factor</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><topic>Transformations</topic><topic>transformer</topic><topic>Transformers</topic><topic>Windings</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ockgoo Lee</creatorcontrib><creatorcontrib>Kyu Hwan An</creatorcontrib><creatorcontrib>Chang-Ho Lee</creatorcontrib><creatorcontrib>Laskar, J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ockgoo Lee</au><au>Kyu Hwan An</au><au>Chang-Ho Lee</au><au>Laskar, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Parallel-Segmented Monolithic Step-Up Transformer</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2011-09-01</date><risdate>2011</risdate><volume>21</volume><issue>9</issue><spage>468</spage><epage>470</epage><pages>468-470</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter proposes a parallel-segmentation method of a step-up transformer that simultaneously improves the impedance transformation ratio and passive efficiency. A corresponding scalable segmentation-based model is also developed on a silicon substrate case. Implementation of the proposed transformer using 0.18 μm CMOS technology successfully demonstrated impedance transformation from 50 Ω to 5.3 Ω with a minimum insertion loss of 1.52 dB at 1.7 GHz. Self-inductance of 1.4 and 4.8 nH, and quality factor of 7.6 and 6.8, were obtained for primary and secondary windings, respectively. Results of the measurement of the transformer show high agreement with the proposed model and verify the accuracy of the physical behavior of the model within the frequency of interest.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2011.2161976</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Applied sciences Circuit properties CMOS CMOS integrated circuits Coils (windings) Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Equivalent-circuit model Exact sciences and technology Impedance impedance transformation Insertion loss Integrated circuit modeling Integrated circuits Microwaves Noise levels passive efficiency power amplifier (PA) Q factor Quality factor Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Transformations transformer Transformers Windings |
| title | A Parallel-Segmented Monolithic Step-Up Transformer |
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