A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications
This letter reports a high efficiency class-E power amplifier using a GaN high electron mobility transistor (HEMT), which is designed at WCDMA band of 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output network using transmission lines is used. For a single ton...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2007-08, Vol.17 (8), p.622-624 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | LEE, Yong-Sub JEONG, Yoon-Ha |
| description | This letter reports a high efficiency class-E power amplifier using a GaN high electron mobility transistor (HEMT), which is designed at WCDMA band of 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output network using transmission lines is used. For a single tone, the proposed output network suppresses all harmonic power levels below -60 dBc for the whole output power range. The peak power-added efficiency (PAE) of 70% with a power gain of 13 dB is achieved at an output power of 43 d Bin. The broadband performance with a power gain over 12 dB and PAE over 60% is maintained through 200 MHz. |
| doi_str_mv | 10.1109/LMWC.2007.901803 |
| format | Article |
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To improve output power and efficiency by suppressing harmonic powers, an output network using transmission lines is used. For a single tone, the proposed output network suppresses all harmonic power levels below -60 dBc for the whole output power range. The peak power-added efficiency (PAE) of 70% with a power gain of 13 dB is achieved at an output power of 43 d Bin. The broadband performance with a power gain over 12 dB and PAE over 60% is maintained through 200 MHz.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2007.901803</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Circuit properties ; Class-E power amplifier (PA) ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Gain ; Gallium nitride ; gallium nitride (GaN) high electron mobility transistor (HEMT) ; Gallium nitrides ; harmonic termination ; Harmonics ; HEMTs ; High electron mobility transistors ; High power amplifiers ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; MODFETs ; Multiaccess communication ; Networks ; Noise levels ; Power amplifiers ; Power gain ; Power generation ; Power system harmonics ; Power transmission lines ; power-added efficiency (PAE) ; Semiconductor devices ; switching-mode amplifier</subject><ispartof>IEEE microwave and wireless components letters, 2007-08, Vol.17 (8), p.622-624</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c450t-458ccc1284f31eaa0e74d0f4c5e724c9b6ea1f4ee803f81bbb8bc037b37acfe43</citedby><cites>FETCH-LOGICAL-c450t-458ccc1284f31eaa0e74d0f4c5e724c9b6ea1f4ee803f81bbb8bc037b37acfe43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4285673$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4285673$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18969872$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LEE, Yong-Sub</creatorcontrib><creatorcontrib>JEONG, Yoon-Ha</creatorcontrib><title>A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter reports a high efficiency class-E power amplifier using a GaN high electron mobility transistor (HEMT), which is designed at WCDMA band of 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output network using transmission lines is used. For a single tone, the proposed output network suppresses all harmonic power levels below -60 dBc for the whole output power range. The peak power-added efficiency (PAE) of 70% with a power gain of 13 dB is achieved at an output power of 43 d Bin. The broadband performance with a power gain over 12 dB and PAE over 60% is maintained through 200 MHz.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Class-E power amplifier (PA)</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Gallium nitride</subject><subject>gallium nitride (GaN) high electron mobility transistor (HEMT)</subject><subject>Gallium nitrides</subject><subject>harmonic termination</subject><subject>Harmonics</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>High power amplifiers</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>MODFETs</subject><subject>Multiaccess communication</subject><subject>Networks</subject><subject>Noise levels</subject><subject>Power amplifiers</subject><subject>Power gain</subject><subject>Power generation</subject><subject>Power system harmonics</subject><subject>Power transmission lines</subject><subject>power-added efficiency (PAE)</subject><subject>Semiconductor devices</subject><subject>switching-mode amplifier</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUFrGzEQhUVpoKnbe6CXpZCSyzozK-1Ke1y2Thywkx4cchRadZQorHcdySb430fGoYUeeprHzDdvGB5jZwhTRKgvF8uHdloAyGkNqIB_YKdYlipHWYmPB80xRw71J_Y5xmcAFErgKbtpsrl_fMpnznnrabD7rO1NjPksuza32Xy2XGW_xlcKWbPe9N75pNwYsof257LJmk3qWbP14xC_sBNn-khf3-uE3V_NVu08X9xd37TNIreihG0uSmWtxUIJx5GMAZLiNzhhS5KFsHVXkUEniNIPTmHXdaqzwGXHpbGOBJ-wH0ffTRhfdhS3eu2jpb43A427qHk6U1QcEnjxXxAriQUvSlAJ_f4P-jzuwpDe0KoSFZSYHCcMjpANY4yBnN4EvzZhrxH0IQN9yEAfMtDHDNLK-buvidb0LpjB-vh3T9VVrWSRuG9HzhPRn7EoVFlJzt8ALf-MhQ</recordid><startdate>20070801</startdate><enddate>20070801</enddate><creator>LEE, Yong-Sub</creator><creator>JEONG, Yoon-Ha</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20070801</creationdate><title>A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications</title><author>LEE, Yong-Sub ; JEONG, Yoon-Ha</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c450t-458ccc1284f31eaa0e74d0f4c5e724c9b6ea1f4ee803f81bbb8bc037b37acfe43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Class-E power amplifier (PA)</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Gallium nitride</topic><topic>gallium nitride (GaN) high electron mobility transistor (HEMT)</topic><topic>Gallium nitrides</topic><topic>harmonic termination</topic><topic>Harmonics</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>High power amplifiers</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>MODFETs</topic><topic>Multiaccess communication</topic><topic>Networks</topic><topic>Noise levels</topic><topic>Power amplifiers</topic><topic>Power gain</topic><topic>Power generation</topic><topic>Power system harmonics</topic><topic>Power transmission lines</topic><topic>power-added efficiency (PAE)</topic><topic>Semiconductor devices</topic><topic>switching-mode amplifier</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LEE, Yong-Sub</creatorcontrib><creatorcontrib>JEONG, Yoon-Ha</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Yong-Sub</au><au>JEONG, Yoon-Ha</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2007-08-01</date><risdate>2007</risdate><volume>17</volume><issue>8</issue><spage>622</spage><epage>624</epage><pages>622-624</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter reports a high efficiency class-E power amplifier using a GaN high electron mobility transistor (HEMT), which is designed at WCDMA band of 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output network using transmission lines is used. For a single tone, the proposed output network suppresses all harmonic power levels below -60 dBc for the whole output power range. The peak power-added efficiency (PAE) of 70% with a power gain of 13 dB is achieved at an output power of 43 d Bin. The broadband performance with a power gain over 12 dB and PAE over 60% is maintained through 200 MHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2007.901803</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1531-1309 |
| ispartof | IEEE microwave and wireless components letters, 2007-08, Vol.17 (8), p.622-624 |
| issn | 1531-1309 2771-957X 1558-1764 2771-9588 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Applied sciences Circuit properties Class-E power amplifier (PA) Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Gallium nitride gallium nitride (GaN) high electron mobility transistor (HEMT) Gallium nitrides harmonic termination Harmonics HEMTs High electron mobility transistors High power amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits MODFETs Multiaccess communication Networks Noise levels Power amplifiers Power gain Power generation Power system harmonics Power transmission lines power-added efficiency (PAE) Semiconductor devices switching-mode amplifier |
| title | A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications |
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