Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga 2 O 3 Schottky Photodiode With Low Dark Current

Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga 2 O 3 Schottky Photodiode With Low Dark Current

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Veröffentlicht in:IEEE electron device letters 2025-02, Vol.46 (2), p.143-146
Hauptverfasser: Zheng, Zhenjie, Lu, Yaoping, Zhuang, Jiachang, Jia, Lemin, Zhu, Shoudong, Chen, Duanyang, Qi, Hongji, Li, Titao, Zhang, Haizhong, Lu, Xiaoqiang
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container_title IEEE electron device letters
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creator Zheng, Zhenjie
Lu, Yaoping
Zhuang, Jiachang
Jia, Lemin
Zhu, Shoudong
Chen, Duanyang
Qi, Hongji
Li, Titao
Zhang, Haizhong
Lu, Xiaoqiang
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doi_str_mv 10.1109/LED.2024.3520391
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title Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga 2 O 3 Schottky Photodiode With Low Dark Current
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