Fast β-Ga2O3 Solar-Blind Photodetectors with High Detectivity on Sapphire Substrates

Ga 2 O 3 Solar blind photodetectors (PDs) have been widely researched in recent years due to their ultrawide bandgap. In this work, high-quality β-Ga 2 O 3 film with Full Width at Half Maximum (FWHM) of 0.19° was grown on sapphire substrates by MOCVD. The Ga 2 O 3 Metal Semiconductor-Metal PDs were...

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Veröffentlicht in:	IEEE electron device letters 2025-01, Vol.46 (1), p.1-1
Hauptverfasser:	He, Chen, Zheng, Jun, Wu, Yiyang, Cui, Jinlai, Liu, Xianquan, Liu, Zhi, Zuo, Yuhua, Cheng, Buwen
Format:	Artikel
Sprache:	eng
Schlagworte:	Density measurement detectivity Detectors Gallium oxides Lighting MOCVD Optical imaging Optoelectronics Photodetectors Photometers Power system measurements Sapphire Sensitivity solar-blind photodetector Substrates X-ray diffraction β-Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3
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