Large Lateral Photovoltaic Effect and Spatial Resistance Effect on MoS2/p-Si Interface

An in-depth study of new phenomena emerging from the interaction between light and matter is a vital scientific research effort. In this report, we investigate the lateral photovoltaics and spatial resistance on p-Si surfaces under 520 nm laser stimulation. Because of the surface states of p-Si, the...

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Veröffentlicht in:	IEEE electron device letters 2025-01, Vol.46 (1), p.1-1
Hauptverfasser:	Jiang, Kang'an, Hu, Su, Zheng, Zhiyan, Zhao, Zhuyikang, Huang, Dehui, Liu, Shuai, Shen, Heyu, Wang, Hui
Format:	Artikel
Sprache:	eng
Schlagworte:	bipolar-resistance effect Electrodes Electrons Lasers lateral photovoltaic effect Morphology MoS<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 p-type silicon Sensitivity Silicon Surface morphology Surface resistance Surface states
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