Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and c...
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| Veröffentlicht in: | IEEE electron device letters 2024-11, Vol.45 (11), p.2094-2097 |
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| container_end_page | 2097 |
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| container_issue | 11 |
| container_start_page | 2094 |
| container_title | IEEE electron device letters |
| container_volume | 45 |
| creator | Yang, Wenlong Ji, Zhenghui Gao, Yang Zhou, Kaiyuan Guo, Qijun Zeng, Dinggui Wang, Shasha Wang, Ming Shen, Lijie Chen, Guilin Sun, Yihui Liu, Enlong He, Shikun |
| description | The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of 680~\mu A at 2 ns, a TMR as high as 119%, ultra-high endurance (over 10^{{12}} cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM. |
| doi_str_mv | 10.1109/LED.2024.3454609 |
| format | Article |
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To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of <inline-formula> <tex-math notation="LaTeX">680~\mu </tex-math></inline-formula>A at 2 ns, a TMR as high as 119%, ultra-high endurance (over <inline-formula> <tex-math notation="LaTeX">10^{{12}} </tex-math></inline-formula> cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2024.3454609</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>300 mm wafer platform ; Etching ; high yield ; ion beam etch ; Magnetic tunneling ; Metals ; Optical switches ; Performance evaluation ; Semiconductor device reliability ; SOT-MRAM ; Switching circuits</subject><ispartof>IEEE electron device letters, 2024-11, Vol.45 (11), p.2094-2097</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-0351-2485 ; 0000-0001-5285-5754 ; 0000-0003-4381-2343 ; 0009-0005-1955-1253 ; 0000-0003-0618-8609</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10666092$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10666092$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yang, Wenlong</creatorcontrib><creatorcontrib>Ji, Zhenghui</creatorcontrib><creatorcontrib>Gao, Yang</creatorcontrib><creatorcontrib>Zhou, Kaiyuan</creatorcontrib><creatorcontrib>Guo, Qijun</creatorcontrib><creatorcontrib>Zeng, Dinggui</creatorcontrib><creatorcontrib>Wang, Shasha</creatorcontrib><creatorcontrib>Wang, Ming</creatorcontrib><creatorcontrib>Shen, Lijie</creatorcontrib><creatorcontrib>Chen, Guilin</creatorcontrib><creatorcontrib>Sun, Yihui</creatorcontrib><creatorcontrib>Liu, Enlong</creatorcontrib><creatorcontrib>He, Shikun</creatorcontrib><title>Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of <inline-formula> <tex-math notation="LaTeX">680~\mu </tex-math></inline-formula>A at 2 ns, a TMR as high as 119%, ultra-high endurance (over <inline-formula> <tex-math notation="LaTeX">10^{{12}} </tex-math></inline-formula> cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM.]]></description><subject>300 mm wafer platform</subject><subject>Etching</subject><subject>high yield</subject><subject>ion beam etch</subject><subject>Magnetic tunneling</subject><subject>Metals</subject><subject>Optical switches</subject><subject>Performance evaluation</subject><subject>Semiconductor device reliability</subject><subject>SOT-MRAM</subject><subject>Switching circuits</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkEtPwkAUhSdGEyu6d-Fi_kDxzrPtkiCKWoKJGOOqmZnegTGlkCmY-O8tgYWrk5PzWHyE3DIYMgbFfTl5GHLgciikkhqKM5IwpfIUlBbnJIFMslQw0Jfkquu-AZiUmUzI68itAv6EdkmnYbmiXwGbmm48fcO4xbYObt-YSN_ni3S2eKEz0-69cbt9xL7VUgFA12v6aTzG7ppceNN0eHPSAfl4nCzG07ScPz2PR2XqmMx2aeatFZ4XFgC8clzz3EgmbN7bXHGOvAarNGdW1Yrn3PhC2RxBFWhcIYQYEDj-urjpuoi-2sawNvG3YlAdYFQ9jOoAozrB6Cd3x0lAxH91rfuUiz-YkVjc</recordid><startdate>202411</startdate><enddate>202411</enddate><creator>Yang, Wenlong</creator><creator>Ji, Zhenghui</creator><creator>Gao, Yang</creator><creator>Zhou, Kaiyuan</creator><creator>Guo, Qijun</creator><creator>Zeng, Dinggui</creator><creator>Wang, Shasha</creator><creator>Wang, Ming</creator><creator>Shen, Lijie</creator><creator>Chen, Guilin</creator><creator>Sun, Yihui</creator><creator>Liu, Enlong</creator><creator>He, Shikun</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0351-2485</orcidid><orcidid>https://orcid.org/0000-0001-5285-5754</orcidid><orcidid>https://orcid.org/0000-0003-4381-2343</orcidid><orcidid>https://orcid.org/0009-0005-1955-1253</orcidid><orcidid>https://orcid.org/0000-0003-0618-8609</orcidid></search><sort><creationdate>202411</creationdate><title>Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers</title><author>Yang, Wenlong ; Ji, Zhenghui ; Gao, Yang ; Zhou, Kaiyuan ; Guo, Qijun ; Zeng, Dinggui ; Wang, Shasha ; Wang, Ming ; Shen, Lijie ; Chen, Guilin ; Sun, Yihui ; Liu, Enlong ; He, Shikun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c147t-7fbb3f29b000f5c2628a413b800f8522e2d0b5621b5d5282af95b8e059eac9333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>300 mm wafer platform</topic><topic>Etching</topic><topic>high yield</topic><topic>ion beam etch</topic><topic>Magnetic tunneling</topic><topic>Metals</topic><topic>Optical switches</topic><topic>Performance evaluation</topic><topic>Semiconductor device reliability</topic><topic>SOT-MRAM</topic><topic>Switching circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Wenlong</creatorcontrib><creatorcontrib>Ji, Zhenghui</creatorcontrib><creatorcontrib>Gao, Yang</creatorcontrib><creatorcontrib>Zhou, Kaiyuan</creatorcontrib><creatorcontrib>Guo, Qijun</creatorcontrib><creatorcontrib>Zeng, Dinggui</creatorcontrib><creatorcontrib>Wang, Shasha</creatorcontrib><creatorcontrib>Wang, Ming</creatorcontrib><creatorcontrib>Shen, Lijie</creatorcontrib><creatorcontrib>Chen, Guilin</creatorcontrib><creatorcontrib>Sun, Yihui</creatorcontrib><creatorcontrib>Liu, Enlong</creatorcontrib><creatorcontrib>He, Shikun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yang, Wenlong</au><au>Ji, Zhenghui</au><au>Gao, Yang</au><au>Zhou, Kaiyuan</au><au>Guo, Qijun</au><au>Zeng, Dinggui</au><au>Wang, Shasha</au><au>Wang, Ming</au><au>Shen, Lijie</au><au>Chen, Guilin</au><au>Sun, Yihui</au><au>Liu, Enlong</au><au>He, Shikun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2024-11</date><risdate>2024</risdate><volume>45</volume><issue>11</issue><spage>2094</spage><epage>2097</epage><pages>2094-2097</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract><![CDATA[The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of <inline-formula> <tex-math notation="LaTeX">680~\mu </tex-math></inline-formula>A at 2 ns, a TMR as high as 119%, ultra-high endurance (over <inline-formula> <tex-math notation="LaTeX">10^{{12}} </tex-math></inline-formula> cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM.]]></abstract><pub>IEEE</pub><doi>10.1109/LED.2024.3454609</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-0351-2485</orcidid><orcidid>https://orcid.org/0000-0001-5285-5754</orcidid><orcidid>https://orcid.org/0000-0003-4381-2343</orcidid><orcidid>https://orcid.org/0009-0005-1955-1253</orcidid><orcidid>https://orcid.org/0000-0003-0618-8609</orcidid></addata></record> |
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| subjects | 300 mm wafer platform Etching high yield ion beam etch Magnetic tunneling Metals Optical switches Performance evaluation Semiconductor device reliability SOT-MRAM Switching circuits |
| title | Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers |
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