Over 50 mA Current in Interdigitated Diamond Field Effect Transistor

This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment on 3.5 \times 3.5 mm2 Ib diamond substrate. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to an interdigitate...

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Veröffentlicht in:	IEEE electron device letters 2024-11, Vol.45 (11), p.2058-2061
Hauptverfasser:	Michez, Damien, Letellier, Juliette, Hammas, Imane, Pernot, Julien, Rouger, Nicolas
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Current measurement Diamond Diamonds Electric power Electrical resistance measurement Engineering Sciences high current interdigitated device JFET JFETs Junctions Logic gates Materials Science Micro and nanotechnologies Microelectronics Physics power electronics Voltage measurement
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