1 kV Vertical P-i-N Diodes Based on Ultra-Wide Bandgap Al 0.47 Ga 0.53 N Grown by MOCVD

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Veröffentlicht in:	IEEE electron device letters 2024-08, Vol.45 (8), p.1429-1432
Hauptverfasser:	Chen, Hang, Zhang, Shuhui, Yang, Tianpeng, Mi, Tingting, Wang, Xiaowen, Liu, Chao
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Sprache:	eng
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doi_str_mv	10.1109/LED.2024.3417243
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title	1 kV Vertical P-i-N Diodes Based on Ultra-Wide Bandgap Al 0.47 Ga 0.53 N Grown by MOCVD
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