Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

Achieving ferroelectricity on high-speed, low-power III-V substrate is important for high-performance non-volatile devices, but was rarely studied. We systematically investigated the ferroelectric (FE) characteristic of Hf0.5Zr0.5Ox (HZO) metal/ferroelectric/ semiconductor (MFS) capacitors on InGaAs...

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Veröffentlicht in:	IEEE electron device letters 2024-05, Vol.45 (5), p.766-769
Hauptverfasser:	Suh, Yoon-Je, Jeong, Jaeyong, Kim, Bong Ho, Kuk, Song-Hyeon, Kim, Seong Kwang, Kim, Joon Pyo, Kim, Sanghyeon
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Capacitors Cycles Electric fields Ferroelectric materials ferroelectric properties Ferroelectricity Hf₀.₅Zr₀.₅Oₓ III-V semiconductors Indium gallium arsenide Indium gallium arsenides Iron Phase ratio Substrates Switches Transmission electron microscopy Voltage measurement X-ray diffraction
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