First Demonstration of an N-Polar InAlGaN/GaN HEMT

In this letter, we report the first N-polar InAlGaN quaternary back barrier high-electron-mobility transistor (HEMT). The epitaxial device heterostructure was grown by metal organic chemical vapor deposition (MOCVD). Hall measurements of the heterostructure showed a two-dimensional electron gas (2DE...

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Veröffentlicht in:	IEEE electron device letters 2024-03, Vol.45 (3), p.328-331
Hauptverfasser:	Hamwey, Robert, Hatui, Nirupam, Akso, Emre, Wu, Feng, Clymore, Christopher, Keller, Stacia, Speck, James S., Mishra, Umesh K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Electron gas Epitaxial growth Gallium nitride GaN HEMTs Heterostructures High electron mobility transistors high-electron-mobility transistor (HEMT) InAlGaN Logic gates metal organic chemical vapor deposition (MOCVD) Metalorganic chemical vapor deposition MOCVD MODFETs N-polar Organic chemistry Power gain quaternary Semiconductor devices Transconductance Wide band gap semiconductors
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