Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 °C, ~ 92 atm., containing CO 2 /N 2 /SO 2 etc.) for 10 days. The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility transistor (HEMT) w...
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| Veröffentlicht in: | IEEE electron device letters 2023-07, Vol.44 (7), p.1-1 |
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| creator | Yuan, Mengyang Niroula, John Xie, Qingyun Rajput, Nitul S. Fu, Kai Luo, Shisong Das, Sagar Kumar Iqbal, Abdullah Jubair Bin Sikder, Bejoy Isamotu, Mohamed Fadil Oh, Minsik Eisner, Savannah R. Senesky, Debbie G. Hunter, Gary W. Chowdhury, Nadim Zhao, Yuji Palacios, Tomas |
| description | This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 °C, ~ 92 atm., containing CO 2 /N 2 /SO 2 etc.) for 10 days. The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility transistor (HEMT) was evaluated by two complementary approaches, (1) in-situ electrical characterization, which revealed proper transistor operation (including E-mode V TH with < 0.09 V variation) in extreme environments; and (2) advanced microscopy investigation of the device after test, which highlighted the effect of the stress conditions on the epitaxial and device structures. To the best of the authors' knowledge, this is the first demonstration and comprehensive analysis of E-mode GaN transistors in such harsh environments, therefore establishing the proposed GaN technology as a strong contender for harsh environment mixed-signal electronics. |
| doi_str_mv | 10.1109/LED.2023.3279813 |
| format | Article |
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The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility transistor (HEMT) was evaluated by two complementary approaches, (1) in-situ electrical characterization, which revealed proper transistor operation (including E-mode V TH with < 0.09 V variation) in extreme environments; and (2) advanced microscopy investigation of the device after test, which highlighted the effect of the stress conditions on the epitaxial and device structures. To the best of the authors' knowledge, this is the first demonstration and comprehensive analysis of E-mode GaN transistors in such harsh environments, therefore establishing the proposed GaN technology as a strong contender for harsh environment mixed-signal electronics.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2023.3279813</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitride ; Aluminum gallium nitrides ; Carbon dioxide ; corrosive gas ; degradation ; Electrical properties ; enhancement-mode ; Extreme environments ; Gallium nitrides ; GaN ; harsh environment ; High electron mobility transistors ; high pressure ; high temperature ; Junctions ; Logic gates ; microscopy ; mixed-signal ; Semiconductor devices ; Sulfur dioxide ; Temperature measurement ; transistor ; Transistors ; Venus ; Wide band gap semiconductors</subject><ispartof>IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c334t-e2676121039bae131848a6718781c1ef3ddebe0122fc2ee1be0ced8d78d7821f3</citedby><cites>FETCH-LOGICAL-c334t-e2676121039bae131848a6718781c1ef3ddebe0122fc2ee1be0ced8d78d7821f3</cites><orcidid>0000-0002-8368-1440 ; 0000-0001-5142-0935 ; 0000-0003-3349-2251 ; 0000-0002-3677-4556 ; 0000-0002-2516-7638 ; 0000-0002-2190-563X ; 0000-0003-0648-1514 ; 0000-0001-9199-4159 ; 0009-0003-3402-9995 ; 0000-0003-2615-7623 ; 0009-0005-1817-2040 ; 0009-0009-5960-7759 ; 0000-0002-9405-7512 ; 0000-0003-2423-2597 ; 0009-0001-1854-6023</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10132878$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10132878$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yuan, Mengyang</creatorcontrib><creatorcontrib>Niroula, John</creatorcontrib><creatorcontrib>Xie, Qingyun</creatorcontrib><creatorcontrib>Rajput, Nitul S.</creatorcontrib><creatorcontrib>Fu, Kai</creatorcontrib><creatorcontrib>Luo, Shisong</creatorcontrib><creatorcontrib>Das, Sagar Kumar</creatorcontrib><creatorcontrib>Iqbal, Abdullah Jubair Bin</creatorcontrib><creatorcontrib>Sikder, Bejoy</creatorcontrib><creatorcontrib>Isamotu, Mohamed Fadil</creatorcontrib><creatorcontrib>Oh, Minsik</creatorcontrib><creatorcontrib>Eisner, Savannah R.</creatorcontrib><creatorcontrib>Senesky, Debbie G.</creatorcontrib><creatorcontrib>Hunter, Gary W.</creatorcontrib><creatorcontrib>Chowdhury, Nadim</creatorcontrib><creatorcontrib>Zhao, Yuji</creatorcontrib><creatorcontrib>Palacios, Tomas</creatorcontrib><title>Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 °C, ~ 92 atm., containing CO 2 /N 2 /SO 2 etc.) for 10 days. The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility transistor (HEMT) was evaluated by two complementary approaches, (1) in-situ electrical characterization, which revealed proper transistor operation (including E-mode V TH with < 0.09 V variation) in extreme environments; and (2) advanced microscopy investigation of the device after test, which highlighted the effect of the stress conditions on the epitaxial and device structures. 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The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility transistor (HEMT) was evaluated by two complementary approaches, (1) in-situ electrical characterization, which revealed proper transistor operation (including E-mode V TH with < 0.09 V variation) in extreme environments; and (2) advanced microscopy investigation of the device after test, which highlighted the effect of the stress conditions on the epitaxial and device structures. To the best of the authors' knowledge, this is the first demonstration and comprehensive analysis of E-mode GaN transistors in such harsh environments, therefore establishing the proposed GaN technology as a strong contender for harsh environment mixed-signal electronics.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2023.3279813</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-8368-1440</orcidid><orcidid>https://orcid.org/0000-0001-5142-0935</orcidid><orcidid>https://orcid.org/0000-0003-3349-2251</orcidid><orcidid>https://orcid.org/0000-0002-3677-4556</orcidid><orcidid>https://orcid.org/0000-0002-2516-7638</orcidid><orcidid>https://orcid.org/0000-0002-2190-563X</orcidid><orcidid>https://orcid.org/0000-0003-0648-1514</orcidid><orcidid>https://orcid.org/0000-0001-9199-4159</orcidid><orcidid>https://orcid.org/0009-0003-3402-9995</orcidid><orcidid>https://orcid.org/0000-0003-2615-7623</orcidid><orcidid>https://orcid.org/0009-0005-1817-2040</orcidid><orcidid>https://orcid.org/0009-0009-5960-7759</orcidid><orcidid>https://orcid.org/0000-0002-9405-7512</orcidid><orcidid>https://orcid.org/0000-0003-2423-2597</orcidid><orcidid>https://orcid.org/0009-0001-1854-6023</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum gallium nitride Aluminum gallium nitrides Carbon dioxide corrosive gas degradation Electrical properties enhancement-mode Extreme environments Gallium nitrides GaN harsh environment High electron mobility transistors high pressure high temperature Junctions Logic gates microscopy mixed-signal Semiconductor devices Sulfur dioxide Temperature measurement transistor Transistors Venus Wide band gap semiconductors |
| title | Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation |
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