SPICE Simulation of Quantum Transport in Al 2 O 3 /HfO 2 -Based Antifuse Memory Cells

SPICE Simulation of Quantum Transport in Al 2 O 3 /HfO 2 -Based Antifuse Memory Cells

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Veröffentlicht in:IEEE electron device letters 2023-07, Vol.44 (7), p.1180-1183
Hauptverfasser: Miranda, E., Aguirre, F. L., Saludes, M., Gonzalez, M. B., Campabadal, F., Suñé, J.
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container_title IEEE electron device letters
container_volume 44
creator Miranda, E.
Aguirre, F. L.
Saludes, M.
Gonzalez, M. B.
Campabadal, F.
Suñé, J.
description
doi_str_mv 10.1109/LED.2023.3273923
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title SPICE Simulation of Quantum Transport in Al 2 O 3 /HfO 2 -Based Antifuse Memory Cells
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