Capacitorless DRAM Cells Based on High-performance Indium-Tin-Oxide Transistors with Record Data Retention and Reduced Write Latency

In this work, capacitorless memory cells using high mobility ultrathin indium-tin-oxide (ITO) channel are successfully demonstrated, addressing the retention and latency challenges in 2T0C DRAM cells based on wide bandgap oxide semiconductors. The short channel 50 nm ITO FET shows excellent transcon...

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Veröffentlicht in:	IEEE electron device letters 2023-01, Vol.44 (1), p.1-1
Hauptverfasser:	Hu, Qianlan, Gu, Chengru, Zhu, Shenwu, Li, Qijun, Tong, Anyu, Kang, Jiyang, Huang, Ru, Wu, Yanqing
Format:	Artikel
Sprache:	eng
Schlagworte:	2T0C DRAM BEOL Dynamic random access memory Energy gap Field effect transistors Indium tin oxides ITO latency Leakage current retention Room temperature Semiconductor devices Transconductance
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