Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics

HfO2 based ferroelectric field-effect transistors (FeFETs) are promising for low-power and high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs due to their accumulative switching behavior, which limits their application in large scale memory arrays. Here we show th...

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Veröffentlicht in:	IEEE electron device letters 2022-12, Vol.43 (12), p.2097-2100
Hauptverfasser:	Hoffmann, Michael, Tan, Ava Jiang, Shanker, Nirmaan, Liao, Yu-Hung, Wang, Li-Chen, Bae, Jong-Ho, Hu, Chenming, Salahuddin, Sayeef
Format:	Artikel
Sprache:	eng
Schlagworte:	Behavioral sciences FeFETs Ferroelectric FET (FeFET) Ferroelectric materials Ferroelectricity Field effect transistors Hafnium oxide Logic gates Semiconductor devices Switches Switching switching dynamics Threshold voltage Transistors write disturb
Online-Zugang:	Volltext
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