Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics
HfO2 based ferroelectric field-effect transistors (FeFETs) are promising for low-power and high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs due to their accumulative switching behavior, which limits their application in large scale memory arrays. Here we show th...
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| Veröffentlicht in: | IEEE electron device letters 2022-12, Vol.43 (12), p.2097-2100 |
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| creator | Hoffmann, Michael Tan, Ava Jiang Shanker, Nirmaan Liao, Yu-Hung Wang, Li-Chen Bae, Jong-Ho Hu, Chenming Salahuddin, Sayeef |
| description | HfO2 based ferroelectric field-effect transistors (FeFETs) are promising for low-power and high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs due to their accumulative switching behavior, which limits their application in large scale memory arrays. Here we show that FeFETs with a thin HfO2 based ferroelectric and SiNx interfacial layer are immune to pulsed write disturbs under both {V}_{\textit {dd}} /2 and {V}_{\textit {dd}} /3 inhibit schemes, but not to continuous write disturb. This contrasts with previous reports which found no difference between pulsed and continuous write disturbs. Our findings suggest that accumulative polarization switching is not an intrinsic property of HfO2 based FeFETs, but might be related to charge trapping dynamics instead. |
| doi_str_mv | 10.1109/LED.2022.3212330 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2022_3212330</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9912400</ieee_id><sourcerecordid>2742704449</sourcerecordid><originalsourceid>FETCH-LOGICAL-c333t-69c3d381f684c8b1753bb72984e3beecef00155cf346030d4bbddce94719991f3</originalsourceid><addsrcrecordid>eNo9kMtOwzAQRS0EEqWwR2ITiXXK2OM8vKz6AKSqLAB1aSXOhLpqk2I7oP49qVqxms25944OY_ccRpyDelrMpiMBQoxQcIEIF2zAkySPIUnxkg0gkzxGDuk1u_F-A8ClzOSALVfOBoqm1ofOlfHcEUVzcq6lLZngrInmsw8frWxYR8u2icfGdLtuWwT7Q9H7rw1mbZuvaHpoip01_pZd1cXW0935Dtlnn5-8xIu359fJeBEbRAxxqgxWmPM6zaXJS54lWJaZULkkLIkM1f2DSWJqlCkgVLIsq8qQkhlXSvEah-zx1Lt37XdHPuhN27mmn9QikyIDKaXqKThRxrXeO6r13tld4Q6agz5a0701fbSmz9b6yMMpYonoH-83hQTAP7j_Z38</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2742704449</pqid></control><display><type>article</type><title>Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics</title><source>IEEE Electronic Library (IEL)</source><creator>Hoffmann, Michael ; Tan, Ava Jiang ; Shanker, Nirmaan ; Liao, Yu-Hung ; Wang, Li-Chen ; Bae, Jong-Ho ; Hu, Chenming ; Salahuddin, Sayeef</creator><creatorcontrib>Hoffmann, Michael ; Tan, Ava Jiang ; Shanker, Nirmaan ; Liao, Yu-Hung ; Wang, Li-Chen ; Bae, Jong-Ho ; Hu, Chenming ; Salahuddin, Sayeef</creatorcontrib><description><![CDATA[HfO2 based ferroelectric field-effect transistors (FeFETs) are promising for low-power and high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs due to their accumulative switching behavior, which limits their application in large scale memory arrays. Here we show that FeFETs with a thin HfO2 based ferroelectric and SiNx interfacial layer are immune to pulsed write disturbs under both <inline-formula> <tex-math notation="LaTeX">{V}_{\textit {dd}} </tex-math></inline-formula>/2 and <inline-formula> <tex-math notation="LaTeX">{V}_{\textit {dd}} </tex-math></inline-formula>/3 inhibit schemes, but not to continuous write disturb. This contrasts with previous reports which found no difference between pulsed and continuous write disturbs. Our findings suggest that accumulative polarization switching is not an intrinsic property of HfO2 based FeFETs, but might be related to charge trapping dynamics instead.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3212330</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Behavioral sciences ; FeFETs ; Ferroelectric FET (FeFET) ; Ferroelectric materials ; Ferroelectricity ; Field effect transistors ; Hafnium oxide ; Logic gates ; Semiconductor devices ; Switches ; Switching ; switching dynamics ; Threshold voltage ; Transistors ; write disturb</subject><ispartof>IEEE electron device letters, 2022-12, Vol.43 (12), p.2097-2100</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-69c3d381f684c8b1753bb72984e3beecef00155cf346030d4bbddce94719991f3</citedby><cites>FETCH-LOGICAL-c333t-69c3d381f684c8b1753bb72984e3beecef00155cf346030d4bbddce94719991f3</cites><orcidid>0000-0002-0315-2208 ; 0000-0003-0836-6296 ; 0000-0003-0703-5030 ; 0000-0001-8016-9612 ; 0000-0002-1786-7132 ; 0000-0001-6493-3457</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9912400$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids></links><search><creatorcontrib>Hoffmann, Michael</creatorcontrib><creatorcontrib>Tan, Ava Jiang</creatorcontrib><creatorcontrib>Shanker, Nirmaan</creatorcontrib><creatorcontrib>Liao, Yu-Hung</creatorcontrib><creatorcontrib>Wang, Li-Chen</creatorcontrib><creatorcontrib>Bae, Jong-Ho</creatorcontrib><creatorcontrib>Hu, Chenming</creatorcontrib><creatorcontrib>Salahuddin, Sayeef</creatorcontrib><title>Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[HfO2 based ferroelectric field-effect transistors (FeFETs) are promising for low-power and high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs due to their accumulative switching behavior, which limits their application in large scale memory arrays. Here we show that FeFETs with a thin HfO2 based ferroelectric and SiNx interfacial layer are immune to pulsed write disturbs under both <inline-formula> <tex-math notation="LaTeX">{V}_{\textit {dd}} </tex-math></inline-formula>/2 and <inline-formula> <tex-math notation="LaTeX">{V}_{\textit {dd}} </tex-math></inline-formula>/3 inhibit schemes, but not to continuous write disturb. This contrasts with previous reports which found no difference between pulsed and continuous write disturbs. Our findings suggest that accumulative polarization switching is not an intrinsic property of HfO2 based FeFETs, but might be related to charge trapping dynamics instead.]]></description><subject>Behavioral sciences</subject><subject>FeFETs</subject><subject>Ferroelectric FET (FeFET)</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Field effect transistors</subject><subject>Hafnium oxide</subject><subject>Logic gates</subject><subject>Semiconductor devices</subject><subject>Switches</subject><subject>Switching</subject><subject>switching dynamics</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>write disturb</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNo9kMtOwzAQRS0EEqWwR2ITiXXK2OM8vKz6AKSqLAB1aSXOhLpqk2I7oP49qVqxms25944OY_ccRpyDelrMpiMBQoxQcIEIF2zAkySPIUnxkg0gkzxGDuk1u_F-A8ClzOSALVfOBoqm1ofOlfHcEUVzcq6lLZngrInmsw8frWxYR8u2icfGdLtuWwT7Q9H7rw1mbZuvaHpoip01_pZd1cXW0935Dtlnn5-8xIu359fJeBEbRAxxqgxWmPM6zaXJS54lWJaZULkkLIkM1f2DSWJqlCkgVLIsq8qQkhlXSvEah-zx1Lt37XdHPuhN27mmn9QikyIDKaXqKThRxrXeO6r13tld4Q6agz5a0701fbSmz9b6yMMpYonoH-83hQTAP7j_Z38</recordid><startdate>20221201</startdate><enddate>20221201</enddate><creator>Hoffmann, Michael</creator><creator>Tan, Ava Jiang</creator><creator>Shanker, Nirmaan</creator><creator>Liao, Yu-Hung</creator><creator>Wang, Li-Chen</creator><creator>Bae, Jong-Ho</creator><creator>Hu, Chenming</creator><creator>Salahuddin, Sayeef</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0315-2208</orcidid><orcidid>https://orcid.org/0000-0003-0836-6296</orcidid><orcidid>https://orcid.org/0000-0003-0703-5030</orcidid><orcidid>https://orcid.org/0000-0001-8016-9612</orcidid><orcidid>https://orcid.org/0000-0002-1786-7132</orcidid><orcidid>https://orcid.org/0000-0001-6493-3457</orcidid></search><sort><creationdate>20221201</creationdate><title>Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics</title><author>Hoffmann, Michael ; Tan, Ava Jiang ; Shanker, Nirmaan ; Liao, Yu-Hung ; Wang, Li-Chen ; Bae, Jong-Ho ; Hu, Chenming ; Salahuddin, Sayeef</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-69c3d381f684c8b1753bb72984e3beecef00155cf346030d4bbddce94719991f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Behavioral sciences</topic><topic>FeFETs</topic><topic>Ferroelectric FET (FeFET)</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Field effect transistors</topic><topic>Hafnium oxide</topic><topic>Logic gates</topic><topic>Semiconductor devices</topic><topic>Switches</topic><topic>Switching</topic><topic>switching dynamics</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>write disturb</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hoffmann, Michael</creatorcontrib><creatorcontrib>Tan, Ava Jiang</creatorcontrib><creatorcontrib>Shanker, Nirmaan</creatorcontrib><creatorcontrib>Liao, Yu-Hung</creatorcontrib><creatorcontrib>Wang, Li-Chen</creatorcontrib><creatorcontrib>Bae, Jong-Ho</creatorcontrib><creatorcontrib>Hu, Chenming</creatorcontrib><creatorcontrib>Salahuddin, Sayeef</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Xplore Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hoffmann, Michael</au><au>Tan, Ava Jiang</au><au>Shanker, Nirmaan</au><au>Liao, Yu-Hung</au><au>Wang, Li-Chen</au><au>Bae, Jong-Ho</au><au>Hu, Chenming</au><au>Salahuddin, Sayeef</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2022-12-01</date><risdate>2022</risdate><volume>43</volume><issue>12</issue><spage>2097</spage><epage>2100</epage><pages>2097-2100</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract><![CDATA[HfO2 based ferroelectric field-effect transistors (FeFETs) are promising for low-power and high-speed non-volatile memories. However, FeFETs can be susceptible to write disturbs due to their accumulative switching behavior, which limits their application in large scale memory arrays. Here we show that FeFETs with a thin HfO2 based ferroelectric and SiNx interfacial layer are immune to pulsed write disturbs under both <inline-formula> <tex-math notation="LaTeX">{V}_{\textit {dd}} </tex-math></inline-formula>/2 and <inline-formula> <tex-math notation="LaTeX">{V}_{\textit {dd}} </tex-math></inline-formula>/3 inhibit schemes, but not to continuous write disturb. This contrasts with previous reports which found no difference between pulsed and continuous write disturbs. Our findings suggest that accumulative polarization switching is not an intrinsic property of HfO2 based FeFETs, but might be related to charge trapping dynamics instead.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2022.3212330</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-0315-2208</orcidid><orcidid>https://orcid.org/0000-0003-0836-6296</orcidid><orcidid>https://orcid.org/0000-0003-0703-5030</orcidid><orcidid>https://orcid.org/0000-0001-8016-9612</orcidid><orcidid>https://orcid.org/0000-0002-1786-7132</orcidid><orcidid>https://orcid.org/0000-0001-6493-3457</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Behavioral sciences FeFETs Ferroelectric FET (FeFET) Ferroelectric materials Ferroelectricity Field effect transistors Hafnium oxide Logic gates Semiconductor devices Switches Switching switching dynamics Threshold voltage Transistors write disturb |
| title | Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics |
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