Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure

We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conduc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2022-10, Vol.43 (10), p.1768-1771
Hauptverfasser: Kim, Young Ho, Kang, Hyuk-Jun, Na, Bock Soon, Lee, Jihye, Choi, Dae-Geun, Park, Chan Woo
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1771
container_issue 10
container_start_page 1768
container_title IEEE electron device letters
container_volume 43
creator Kim, Young Ho
Kang, Hyuk-Jun
Na, Bock Soon
Lee, Jihye
Choi, Dae-Geun
Park, Chan Woo
description We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.
doi_str_mv 10.1109/LED.2022.3200020
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2022_3200020</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9862992</ieee_id><sourcerecordid>2718786337</sourcerecordid><originalsourceid>FETCH-LOGICAL-c244t-fdbf80c8532649afb6fe1419a16598e9de778b541b62bedeebffba131731ed313</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKt7wU3A9bS5Sea1LPXRQrELK26EkMzc2CltpiYZsP_eKS2uzuY758BHyD2wEQArx4vnpxFnnI8EZ4xxdkEGkKZFwtJMXJIByyUkAlh2TW5C2DAGUuZyQL7eo8dYrbXZItWupiuvXdhrjy7SuYvoq9Y5rGKgn01c09nB-Kamk-_kTbt2h2E9nru66XZ01Ti6_G1qpP1kV8XO4y25snob8O6cQ_Lx8ryazpLF8nU-nSySiksZE1sbW7CqSAXPZKmtySyChFJDlpYFljXmeWFSCSbjBmtEY63RICAXgLUAMSSPp929b386DFFt2s67_lLxHIq8yITIe4qdqMq3IXi0au-bnfYHBUwdHareoTo6VGeHfeXhVGkQ8R8vi4yXJRd_fuRt0Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2718786337</pqid></control><display><type>article</type><title>Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure</title><source>IEEE Electronic Library (IEL)</source><creator>Kim, Young Ho ; Kang, Hyuk-Jun ; Na, Bock Soon ; Lee, Jihye ; Choi, Dae-Geun ; Park, Chan Woo</creator><creatorcontrib>Kim, Young Ho ; Kang, Hyuk-Jun ; Na, Bock Soon ; Lee, Jihye ; Choi, Dae-Geun ; Park, Chan Woo</creatorcontrib><description>We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3200020</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuits ; hybrid ; Hybrid structures ; Indium tin oxide ; Indium tin oxides ; Integrated circuit interconnections ; Interconnections ; Metals ; nanomesh ; Nanoscale devices ; nanotransfer printing ; Parameter modification ; Photolithography ; Printing ; Resistance ; Stretchability ; Stretchable interconnects ; Substrates ; Thin films ; transparent</subject><ispartof>IEEE electron device letters, 2022-10, Vol.43 (10), p.1768-1771</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c244t-fdbf80c8532649afb6fe1419a16598e9de778b541b62bedeebffba131731ed313</cites><orcidid>0000-0002-8666-016X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9862992$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9862992$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Young Ho</creatorcontrib><creatorcontrib>Kang, Hyuk-Jun</creatorcontrib><creatorcontrib>Na, Bock Soon</creatorcontrib><creatorcontrib>Lee, Jihye</creatorcontrib><creatorcontrib>Choi, Dae-Geun</creatorcontrib><creatorcontrib>Park, Chan Woo</creatorcontrib><title>Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.</description><subject>Circuits</subject><subject>hybrid</subject><subject>Hybrid structures</subject><subject>Indium tin oxide</subject><subject>Indium tin oxides</subject><subject>Integrated circuit interconnections</subject><subject>Interconnections</subject><subject>Metals</subject><subject>nanomesh</subject><subject>Nanoscale devices</subject><subject>nanotransfer printing</subject><subject>Parameter modification</subject><subject>Photolithography</subject><subject>Printing</subject><subject>Resistance</subject><subject>Stretchability</subject><subject>Stretchable interconnects</subject><subject>Substrates</subject><subject>Thin films</subject><subject>transparent</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLAzEUhYMoWKt7wU3A9bS5Sea1LPXRQrELK26EkMzc2CltpiYZsP_eKS2uzuY758BHyD2wEQArx4vnpxFnnI8EZ4xxdkEGkKZFwtJMXJIByyUkAlh2TW5C2DAGUuZyQL7eo8dYrbXZItWupiuvXdhrjy7SuYvoq9Y5rGKgn01c09nB-Kamk-_kTbt2h2E9nru66XZ01Ti6_G1qpP1kV8XO4y25snob8O6cQ_Lx8ryazpLF8nU-nSySiksZE1sbW7CqSAXPZKmtySyChFJDlpYFljXmeWFSCSbjBmtEY63RICAXgLUAMSSPp929b386DFFt2s67_lLxHIq8yITIe4qdqMq3IXi0au-bnfYHBUwdHareoTo6VGeHfeXhVGkQ8R8vi4yXJRd_fuRt0Q</recordid><startdate>20221001</startdate><enddate>20221001</enddate><creator>Kim, Young Ho</creator><creator>Kang, Hyuk-Jun</creator><creator>Na, Bock Soon</creator><creator>Lee, Jihye</creator><creator>Choi, Dae-Geun</creator><creator>Park, Chan Woo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8666-016X</orcidid></search><sort><creationdate>20221001</creationdate><title>Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure</title><author>Kim, Young Ho ; Kang, Hyuk-Jun ; Na, Bock Soon ; Lee, Jihye ; Choi, Dae-Geun ; Park, Chan Woo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c244t-fdbf80c8532649afb6fe1419a16598e9de778b541b62bedeebffba131731ed313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Circuits</topic><topic>hybrid</topic><topic>Hybrid structures</topic><topic>Indium tin oxide</topic><topic>Indium tin oxides</topic><topic>Integrated circuit interconnections</topic><topic>Interconnections</topic><topic>Metals</topic><topic>nanomesh</topic><topic>Nanoscale devices</topic><topic>nanotransfer printing</topic><topic>Parameter modification</topic><topic>Photolithography</topic><topic>Printing</topic><topic>Resistance</topic><topic>Stretchability</topic><topic>Stretchable interconnects</topic><topic>Substrates</topic><topic>Thin films</topic><topic>transparent</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Young Ho</creatorcontrib><creatorcontrib>Kang, Hyuk-Jun</creatorcontrib><creatorcontrib>Na, Bock Soon</creatorcontrib><creatorcontrib>Lee, Jihye</creatorcontrib><creatorcontrib>Choi, Dae-Geun</creatorcontrib><creatorcontrib>Park, Chan Woo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Young Ho</au><au>Kang, Hyuk-Jun</au><au>Na, Bock Soon</au><au>Lee, Jihye</au><au>Choi, Dae-Geun</au><au>Park, Chan Woo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2022-10-01</date><risdate>2022</risdate><volume>43</volume><issue>10</issue><spage>1768</spage><epage>1771</epage><pages>1768-1771</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2022.3200020</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-8666-016X</orcidid></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0741-3106
ispartof IEEE electron device letters, 2022-10, Vol.43 (10), p.1768-1771
issn 0741-3106
1558-0563
language eng
recordid cdi_crossref_primary_10_1109_LED_2022_3200020
source IEEE Electronic Library (IEL)
subjects Circuits
hybrid
Hybrid structures
Indium tin oxide
Indium tin oxides
Integrated circuit interconnections
Interconnections
Metals
nanomesh
Nanoscale devices
nanotransfer printing
Parameter modification
Photolithography
Printing
Resistance
Stretchability
Stretchable interconnects
Substrates
Thin films
transparent
title Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T08%3A58%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Stretchable%20and%20Transparent%20Interconnects%20With%20Hybrid%20Ag-Nanomesh/Indium%20Tin%20Oxide%20Structure&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kim,%20Young%20Ho&rft.date=2022-10-01&rft.volume=43&rft.issue=10&rft.spage=1768&rft.epage=1771&rft.pages=1768-1771&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2022.3200020&rft_dat=%3Cproquest_RIE%3E2718786337%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2718786337&rft_id=info:pmid/&rft_ieee_id=9862992&rfr_iscdi=true