Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure
We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conduc...
Gespeichert in:
Veröffentlicht in: | IEEE electron device letters 2022-10, Vol.43 (10), p.1768-1771 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1771 |
---|---|
container_issue | 10 |
container_start_page | 1768 |
container_title | IEEE electron device letters |
container_volume | 43 |
creator | Kim, Young Ho Kang, Hyuk-Jun Na, Bock Soon Lee, Jihye Choi, Dae-Geun Park, Chan Woo |
description | We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits. |
doi_str_mv | 10.1109/LED.2022.3200020 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2022_3200020</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9862992</ieee_id><sourcerecordid>2718786337</sourcerecordid><originalsourceid>FETCH-LOGICAL-c244t-fdbf80c8532649afb6fe1419a16598e9de778b541b62bedeebffba131731ed313</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKt7wU3A9bS5Sea1LPXRQrELK26EkMzc2CltpiYZsP_eKS2uzuY758BHyD2wEQArx4vnpxFnnI8EZ4xxdkEGkKZFwtJMXJIByyUkAlh2TW5C2DAGUuZyQL7eo8dYrbXZItWupiuvXdhrjy7SuYvoq9Y5rGKgn01c09nB-Kamk-_kTbt2h2E9nru66XZ01Ti6_G1qpP1kV8XO4y25snob8O6cQ_Lx8ryazpLF8nU-nSySiksZE1sbW7CqSAXPZKmtySyChFJDlpYFljXmeWFSCSbjBmtEY63RICAXgLUAMSSPp929b386DFFt2s67_lLxHIq8yITIe4qdqMq3IXi0au-bnfYHBUwdHareoTo6VGeHfeXhVGkQ8R8vi4yXJRd_fuRt0Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2718786337</pqid></control><display><type>article</type><title>Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure</title><source>IEEE Electronic Library (IEL)</source><creator>Kim, Young Ho ; Kang, Hyuk-Jun ; Na, Bock Soon ; Lee, Jihye ; Choi, Dae-Geun ; Park, Chan Woo</creator><creatorcontrib>Kim, Young Ho ; Kang, Hyuk-Jun ; Na, Bock Soon ; Lee, Jihye ; Choi, Dae-Geun ; Park, Chan Woo</creatorcontrib><description>We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3200020</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuits ; hybrid ; Hybrid structures ; Indium tin oxide ; Indium tin oxides ; Integrated circuit interconnections ; Interconnections ; Metals ; nanomesh ; Nanoscale devices ; nanotransfer printing ; Parameter modification ; Photolithography ; Printing ; Resistance ; Stretchability ; Stretchable interconnects ; Substrates ; Thin films ; transparent</subject><ispartof>IEEE electron device letters, 2022-10, Vol.43 (10), p.1768-1771</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c244t-fdbf80c8532649afb6fe1419a16598e9de778b541b62bedeebffba131731ed313</cites><orcidid>0000-0002-8666-016X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9862992$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9862992$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Young Ho</creatorcontrib><creatorcontrib>Kang, Hyuk-Jun</creatorcontrib><creatorcontrib>Na, Bock Soon</creatorcontrib><creatorcontrib>Lee, Jihye</creatorcontrib><creatorcontrib>Choi, Dae-Geun</creatorcontrib><creatorcontrib>Park, Chan Woo</creatorcontrib><title>Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.</description><subject>Circuits</subject><subject>hybrid</subject><subject>Hybrid structures</subject><subject>Indium tin oxide</subject><subject>Indium tin oxides</subject><subject>Integrated circuit interconnections</subject><subject>Interconnections</subject><subject>Metals</subject><subject>nanomesh</subject><subject>Nanoscale devices</subject><subject>nanotransfer printing</subject><subject>Parameter modification</subject><subject>Photolithography</subject><subject>Printing</subject><subject>Resistance</subject><subject>Stretchability</subject><subject>Stretchable interconnects</subject><subject>Substrates</subject><subject>Thin films</subject><subject>transparent</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLAzEUhYMoWKt7wU3A9bS5Sea1LPXRQrELK26EkMzc2CltpiYZsP_eKS2uzuY758BHyD2wEQArx4vnpxFnnI8EZ4xxdkEGkKZFwtJMXJIByyUkAlh2TW5C2DAGUuZyQL7eo8dYrbXZItWupiuvXdhrjy7SuYvoq9Y5rGKgn01c09nB-Kamk-_kTbt2h2E9nru66XZ01Ti6_G1qpP1kV8XO4y25snob8O6cQ_Lx8ryazpLF8nU-nSySiksZE1sbW7CqSAXPZKmtySyChFJDlpYFljXmeWFSCSbjBmtEY63RICAXgLUAMSSPp929b386DFFt2s67_lLxHIq8yITIe4qdqMq3IXi0au-bnfYHBUwdHareoTo6VGeHfeXhVGkQ8R8vi4yXJRd_fuRt0Q</recordid><startdate>20221001</startdate><enddate>20221001</enddate><creator>Kim, Young Ho</creator><creator>Kang, Hyuk-Jun</creator><creator>Na, Bock Soon</creator><creator>Lee, Jihye</creator><creator>Choi, Dae-Geun</creator><creator>Park, Chan Woo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8666-016X</orcidid></search><sort><creationdate>20221001</creationdate><title>Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure</title><author>Kim, Young Ho ; Kang, Hyuk-Jun ; Na, Bock Soon ; Lee, Jihye ; Choi, Dae-Geun ; Park, Chan Woo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c244t-fdbf80c8532649afb6fe1419a16598e9de778b541b62bedeebffba131731ed313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Circuits</topic><topic>hybrid</topic><topic>Hybrid structures</topic><topic>Indium tin oxide</topic><topic>Indium tin oxides</topic><topic>Integrated circuit interconnections</topic><topic>Interconnections</topic><topic>Metals</topic><topic>nanomesh</topic><topic>Nanoscale devices</topic><topic>nanotransfer printing</topic><topic>Parameter modification</topic><topic>Photolithography</topic><topic>Printing</topic><topic>Resistance</topic><topic>Stretchability</topic><topic>Stretchable interconnects</topic><topic>Substrates</topic><topic>Thin films</topic><topic>transparent</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Young Ho</creatorcontrib><creatorcontrib>Kang, Hyuk-Jun</creatorcontrib><creatorcontrib>Na, Bock Soon</creatorcontrib><creatorcontrib>Lee, Jihye</creatorcontrib><creatorcontrib>Choi, Dae-Geun</creatorcontrib><creatorcontrib>Park, Chan Woo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Young Ho</au><au>Kang, Hyuk-Jun</au><au>Na, Bock Soon</au><au>Lee, Jihye</au><au>Choi, Dae-Geun</au><au>Park, Chan Woo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2022-10-01</date><risdate>2022</risdate><volume>43</volume><issue>10</issue><spage>1768</spage><epage>1771</epage><pages>1768-1771</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2022.3200020</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-8666-016X</orcidid></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 0741-3106 |
ispartof | IEEE electron device letters, 2022-10, Vol.43 (10), p.1768-1771 |
issn | 0741-3106 1558-0563 |
language | eng |
recordid | cdi_crossref_primary_10_1109_LED_2022_3200020 |
source | IEEE Electronic Library (IEL) |
subjects | Circuits hybrid Hybrid structures Indium tin oxide Indium tin oxides Integrated circuit interconnections Interconnections Metals nanomesh Nanoscale devices nanotransfer printing Parameter modification Photolithography Printing Resistance Stretchability Stretchable interconnects Substrates Thin films transparent |
title | Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T08%3A58%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Stretchable%20and%20Transparent%20Interconnects%20With%20Hybrid%20Ag-Nanomesh/Indium%20Tin%20Oxide%20Structure&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kim,%20Young%20Ho&rft.date=2022-10-01&rft.volume=43&rft.issue=10&rft.spage=1768&rft.epage=1771&rft.pages=1768-1771&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2022.3200020&rft_dat=%3Cproquest_RIE%3E2718786337%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2718786337&rft_id=info:pmid/&rft_ieee_id=9862992&rfr_iscdi=true |