High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

In this work, a silicon-on-insulator (SOI)-based lateral avalanche photodiode (APD) is proposed and fabricated. The device features lateral separate-absorption-multiplication (SAM) and electron-only injection. The bandwidth is optimized with the effective blocking of the deep photogenerated carriers...

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Veröffentlicht in:	IEEE electron device letters 2022-07, Vol.43 (7), p.1077-1080
Hauptverfasser:	Xu, Hang, Yang, Yafen, Tan, Jingjing, Chen, Lin, Zhu, Hao, Sun, Qingqing
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche diodes Avalanche photodiodes Bandwidth Breakdown breakdown voltage Cathodes Dark current Electric breakdown Electric fields electron injection Junctions lateral avalanche photodiode Multiplication Photodiodes Silicon SOI SOI (semiconductors) Structural stability
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