High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure
In this work, a silicon-on-insulator (SOI)-based lateral avalanche photodiode (APD) is proposed and fabricated. The device features lateral separate-absorption-multiplication (SAM) and electron-only injection. The bandwidth is optimized with the effective blocking of the deep photogenerated carriers...
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| Veröffentlicht in: | IEEE electron device letters 2022-07, Vol.43 (7), p.1077-1080 |
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| creator | Xu, Hang Yang, Yafen Tan, Jingjing Chen, Lin Zhu, Hao Sun, Qingqing |
| description | In this work, a silicon-on-insulator (SOI)-based lateral avalanche photodiode (APD) is proposed and fabricated. The device features lateral separate-absorption-multiplication (SAM) and electron-only injection. The bandwidth is optimized with the effective blocking of the deep photogenerated carriers by SOI structure. The device stability is also improved by additional shallow P-well region near the N + -region which can eliminate the edge breakdown induced by the curvature effect. Simulation results demonstrate that avalanche region (high electric field zone) is confined at the lateral PN + junction. Experimental fabrication and characterizations are further realized, and this SOI-based lateral APD device exhibits high responsivity (1.92 A/W at 7.8 V for 300 nm), low dark current (below 5 V), large bandwidth (12.4 GHz at 8.2 V), and low breakdown voltage (~7.8 V). The demonstrated device performance as well as the simple structure and good process compatibility can be attractive in future photo-detecting and advanced sensing applications. |
| doi_str_mv | 10.1109/LED.2022.3173593 |
| format | Article |
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The device features lateral separate-absorption-multiplication (SAM) and electron-only injection. The bandwidth is optimized with the effective blocking of the deep photogenerated carriers by SOI structure. The device stability is also improved by additional shallow P-well region near the N + -region which can eliminate the edge breakdown induced by the curvature effect. Simulation results demonstrate that avalanche region (high electric field zone) is confined at the lateral PN + junction. Experimental fabrication and characterizations are further realized, and this SOI-based lateral APD device exhibits high responsivity (1.92 A/W at 7.8 V for 300 nm), low dark current (below 5 V), large bandwidth (12.4 GHz at 8.2 V), and low breakdown voltage (~7.8 V). The demonstrated device performance as well as the simple structure and good process compatibility can be attractive in future photo-detecting and advanced sensing applications.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3173593</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Avalanche diodes ; Avalanche photodiodes ; Bandwidth ; Breakdown ; breakdown voltage ; Cathodes ; Dark current ; Electric breakdown ; Electric fields ; electron injection ; Junctions ; lateral avalanche photodiode ; Multiplication ; Photodiodes ; Silicon ; SOI ; SOI (semiconductors) ; Structural stability</subject><ispartof>IEEE electron device letters, 2022-07, Vol.43 (7), p.1077-1080</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-9d36038b346c7ca471426192cf69e4a80142c17513cd44a0ad9921717d99960e3</citedby><cites>FETCH-LOGICAL-c291t-9d36038b346c7ca471426192cf69e4a80142c17513cd44a0ad9921717d99960e3</cites><orcidid>0000-0003-3890-6871 ; 0000-0002-6784-5863 ; 0000-0002-7145-7564 ; 0000-0002-6533-1834 ; 0000-0002-0785-9446</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9771236$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9771236$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xu, Hang</creatorcontrib><creatorcontrib>Yang, Yafen</creatorcontrib><creatorcontrib>Tan, Jingjing</creatorcontrib><creatorcontrib>Chen, Lin</creatorcontrib><creatorcontrib>Zhu, Hao</creatorcontrib><creatorcontrib>Sun, Qingqing</creatorcontrib><title>High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this work, a silicon-on-insulator (SOI)-based lateral avalanche photodiode (APD) is proposed and fabricated. 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The demonstrated device performance as well as the simple structure and good process compatibility can be attractive in future photo-detecting and advanced sensing applications.</description><subject>Avalanche diodes</subject><subject>Avalanche photodiodes</subject><subject>Bandwidth</subject><subject>Breakdown</subject><subject>breakdown voltage</subject><subject>Cathodes</subject><subject>Dark current</subject><subject>Electric breakdown</subject><subject>Electric fields</subject><subject>electron injection</subject><subject>Junctions</subject><subject>lateral avalanche photodiode</subject><subject>Multiplication</subject><subject>Photodiodes</subject><subject>Silicon</subject><subject>SOI</subject><subject>SOI (semiconductors)</subject><subject>Structural stability</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kFFLwzAUhYMoOKfvgi8FnztzkzRpHuecblBwMPccYpq6jq6ZSSr4783YEC4cuJxz7uVD6B7wBADLp2r-MiGYkAkFQQtJL9AIiqLMccHpJRphwSCngPk1uglhhzEwJtgIbRbt1zZfWd84v9e9sVmlo_W6y6Y_ukuLrc1WWxdd3braZs862DpzfbZuu9a4Pk-z7MPQ6eh8to5-MHHw9hZdNboL9u6sY7R5nX_MFnn1_racTavcEAkxlzXlmJaflHEjjGYCGOEgiWm4tEyX6UliQBRATc2YxrqWkoAAkVRybOkYPZ56D959DzZEtXOD79NJRXiZbqQ2SC58chnvQvC2UQff7rX_VYDVEZ5K8NQRnjrDS5GHU6S11v7bpRBAKKd_u_xpNw</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>Xu, Hang</creator><creator>Yang, Yafen</creator><creator>Tan, Jingjing</creator><creator>Chen, Lin</creator><creator>Zhu, Hao</creator><creator>Sun, Qingqing</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Avalanche diodes Avalanche photodiodes Bandwidth Breakdown breakdown voltage Cathodes Dark current Electric breakdown Electric fields electron injection Junctions lateral avalanche photodiode Multiplication Photodiodes Silicon SOI SOI (semiconductors) Structural stability |
| title | High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure |
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