Amorphous-Metal-Oxide-Semiconductor Thin-Film Planar-Type Spike-Timing- Dependent-Plasticity Synapse Device

An amorphous-metal-oxide-semiconductor (AOS) thin-film planar-type spike-timing-dependent-plasticity (STDP) synapse device has been developed. The AOS is a non-rare material and can be easily deposited, and therefore it is inexpensive. On the other hand, the STDP is promising as a learning principle...

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Veröffentlicht in:	IEEE electron device letters 2021-07, Vol.42 (7), p.1014-1016
Hauptverfasser:	Shibayama, Yuki, Ohnishi, Yuki, Katagiri, Tetsuya, Yamamoto, Yuhei, Nakashima, Yasuhiko, Kimura, Mutsumi
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous-metal-oxide-semiconductor (AOS) Charge injection Hot carriers Insulators Memristors Metal oxide semiconductors neuromorphic system Neuromorphics Periodic structures planar-type Plastic properties spike-timing-dependent-plasticity (STDP) Spikes synapse device Synapses Thin film transistors thin-film
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