Impacts of Electrical Field in Tunneling Layer on Operation Characteristics of Poly-Ge Charge-Trapping Flash Memory Device

Operation characteristics of polycrystalline germanium (poly-Ge) tri-gate junctionless (JL) charge-trapping (CT) flash memory devices with stacked tunneling layer were studied in this work. The programming speeds of poly-Ge tri-gate JL flash device with GeO x /Al 2 O 3 /SiO 2 tunneling layer are fas...

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Veröffentlicht in:	IEEE electron device letters 2020-12, Vol.41 (12), p.1766-1769
Hauptverfasser:	Fang, Hsin-Kai, Chang-Liao, Kuei-Shu, Chou, Kuan-Chi, Chao, Tzu-Cheng, Tsai, Jung-En, Li, Yan-Lin, Huang, Wen-Hsien, Shen, Chang-Hong, Shieh, Jia-Min
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide charge-trapping (CT) CMOS Diffusion barriers Electric fields Flash memories flash memory Flash memory (computers) Germanium Germanium oxides Integrated circuits junctionless Low temperature Memory devices Poly-Ge channel Silicon dioxide Trapping tri-gate Tunneling
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