Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)
We present a novel design of fine segmented low gain avalanchediodes ('GAD) based on trench-isolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than 10 μm, from the 20-80 μm of the current 'GAD technology, enabling the production of senso...
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| Veröffentlicht in: | IEEE electron device letters 2020-06, Vol.41 (6), p.884-887 |
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| container_title | IEEE electron device letters |
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| creator | Paternoster, G. Borghi, G. Boscardin, M. Cartiglia, N. Ferrero, M. Ficorella, F. Siviero, F. Gola, A. Bellutti, P. |
| description | We present a novel design of fine segmented low gain avalanchediodes ('GAD) based on trench-isolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than 10 μm, from the 20-80 μm of the current 'GAD technology, enabling the production of sensors with small pixel pitch and high fill-factor. Prototypes of this new technologywere produced in the FBK laboratories. Their electrical characterization in terms of I-V, gain measurement and response to a focused laser, indicates that the trenches provide electrical isolation among pixels without any increase in the dark current level and without affecting the gain of the sensor. In addition, I-V measurements of p-i-n diodes with the same trench-isolation structure demonstrate that such termination scheme can withstand more than 500 Volts without reaching breakdown. This is well above the typical operating bias voltage of 'GADs, thus confirming that trench-isolation is a promising solution for finely pixelated 'GAD sensors. |
| doi_str_mv | 10.1109/LED.2020.2991351 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2020_2991351</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9081916</ieee_id><sourcerecordid>2406701149</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-2a307e5f90e513de0d696f25c0967cc0ff031aa745d3de7a350a3f8eff5ee05b3</originalsourceid><addsrcrecordid>eNo9kM9Lw0AQhRdRsFbvgpeAFz1sncn-yh5DW2sh4CWelzWZxZTa1N1W8b83pcXTHN733sDH2C3CBBHsUzWfTXLIYZJbi0LhGRuhUgUHpcU5G4GRyAWCvmRXKa0AUEojR0zWkTbNB1-mfu131GZV_5MtfLfJym-_9kNE2azrW0rZQ73k1aKcpcdrdhH8OtHN6Y7Z2_O8nr7w6nWxnJYVb4Qodjz3AgypYIEUipag1VaHXDVgtWkaCAEEem-kaofUeKHAi1BQCIoI1LsYs_vj7jb2X3tKO7fq93EzvHS5BG0AUdqBgiPVxD6lSMFtY_fp469DcAc3bnDjDm7cyc1QuTtWOiL6xy0UaFGLP3djXMU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2406701149</pqid></control><display><type>article</type><title>Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)</title><source>IEEE Electronic Library (IEL)</source><creator>Paternoster, G. ; Borghi, G. ; Boscardin, M. ; Cartiglia, N. ; Ferrero, M. ; Ficorella, F. ; Siviero, F. ; Gola, A. ; Bellutti, P.</creator><creatorcontrib>Paternoster, G. ; Borghi, G. ; Boscardin, M. ; Cartiglia, N. ; Ferrero, M. ; Ficorella, F. ; Siviero, F. ; Gola, A. ; Bellutti, P.</creatorcontrib><description>We present a novel design of fine segmented low gain avalanchediodes ('GAD) based on trench-isolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than 10 μm, from the 20-80 μm of the current 'GAD technology, enabling the production of sensors with small pixel pitch and high fill-factor. Prototypes of this new technologywere produced in the FBK laboratories. Their electrical characterization in terms of I-V, gain measurement and response to a focused laser, indicates that the trenches provide electrical isolation among pixels without any increase in the dark current level and without affecting the gain of the sensor. In addition, I-V measurements of p-i-n diodes with the same trench-isolation structure demonstrate that such termination scheme can withstand more than 500 Volts without reaching breakdown. This is well above the typical operating bias voltage of 'GADs, thus confirming that trench-isolation is a promising solution for finely pixelated 'GAD sensors.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2020.2991351</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Avalanche diodes ; Current voltage characteristics ; Dark current ; Deep trench isolation ; Detectors ; Electrical properties ; Implants ; Junctions ; LGAD ; New technology ; pixel segmentation ; Pixels ; Sensor phenomena and characterization ; Sensors ; Silicon ; trench</subject><ispartof>IEEE electron device letters, 2020-06, Vol.41 (6), p.884-887</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-2a307e5f90e513de0d696f25c0967cc0ff031aa745d3de7a350a3f8eff5ee05b3</citedby><cites>FETCH-LOGICAL-c338t-2a307e5f90e513de0d696f25c0967cc0ff031aa745d3de7a350a3f8eff5ee05b3</cites><orcidid>0000-0001-9676-8222 ; 0000-0002-0296-1193 ; 0000-0001-5744-0195 ; 0000-0002-5278-5044 ; 0000-0001-8488-4728</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9081916$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9081916$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Paternoster, G.</creatorcontrib><creatorcontrib>Borghi, G.</creatorcontrib><creatorcontrib>Boscardin, M.</creatorcontrib><creatorcontrib>Cartiglia, N.</creatorcontrib><creatorcontrib>Ferrero, M.</creatorcontrib><creatorcontrib>Ficorella, F.</creatorcontrib><creatorcontrib>Siviero, F.</creatorcontrib><creatorcontrib>Gola, A.</creatorcontrib><creatorcontrib>Bellutti, P.</creatorcontrib><title>Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We present a novel design of fine segmented low gain avalanchediodes ('GAD) based on trench-isolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than 10 μm, from the 20-80 μm of the current 'GAD technology, enabling the production of sensors with small pixel pitch and high fill-factor. Prototypes of this new technologywere produced in the FBK laboratories. Their electrical characterization in terms of I-V, gain measurement and response to a focused laser, indicates that the trenches provide electrical isolation among pixels without any increase in the dark current level and without affecting the gain of the sensor. In addition, I-V measurements of p-i-n diodes with the same trench-isolation structure demonstrate that such termination scheme can withstand more than 500 Volts without reaching breakdown. This is well above the typical operating bias voltage of 'GADs, thus confirming that trench-isolation is a promising solution for finely pixelated 'GAD sensors.</description><subject>Avalanche diodes</subject><subject>Current voltage characteristics</subject><subject>Dark current</subject><subject>Deep trench isolation</subject><subject>Detectors</subject><subject>Electrical properties</subject><subject>Implants</subject><subject>Junctions</subject><subject>LGAD</subject><subject>New technology</subject><subject>pixel segmentation</subject><subject>Pixels</subject><subject>Sensor phenomena and characterization</subject><subject>Sensors</subject><subject>Silicon</subject><subject>trench</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM9Lw0AQhRdRsFbvgpeAFz1sncn-yh5DW2sh4CWelzWZxZTa1N1W8b83pcXTHN733sDH2C3CBBHsUzWfTXLIYZJbi0LhGRuhUgUHpcU5G4GRyAWCvmRXKa0AUEojR0zWkTbNB1-mfu131GZV_5MtfLfJym-_9kNE2azrW0rZQ73k1aKcpcdrdhH8OtHN6Y7Z2_O8nr7w6nWxnJYVb4Qodjz3AgypYIEUipag1VaHXDVgtWkaCAEEem-kaofUeKHAi1BQCIoI1LsYs_vj7jb2X3tKO7fq93EzvHS5BG0AUdqBgiPVxD6lSMFtY_fp469DcAc3bnDjDm7cyc1QuTtWOiL6xy0UaFGLP3djXMU</recordid><startdate>20200601</startdate><enddate>20200601</enddate><creator>Paternoster, G.</creator><creator>Borghi, G.</creator><creator>Boscardin, M.</creator><creator>Cartiglia, N.</creator><creator>Ferrero, M.</creator><creator>Ficorella, F.</creator><creator>Siviero, F.</creator><creator>Gola, A.</creator><creator>Bellutti, P.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9676-8222</orcidid><orcidid>https://orcid.org/0000-0002-0296-1193</orcidid><orcidid>https://orcid.org/0000-0001-5744-0195</orcidid><orcidid>https://orcid.org/0000-0002-5278-5044</orcidid><orcidid>https://orcid.org/0000-0001-8488-4728</orcidid></search><sort><creationdate>20200601</creationdate><title>Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)</title><author>Paternoster, G. ; Borghi, G. ; Boscardin, M. ; Cartiglia, N. ; Ferrero, M. ; Ficorella, F. ; Siviero, F. ; Gola, A. ; Bellutti, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-2a307e5f90e513de0d696f25c0967cc0ff031aa745d3de7a350a3f8eff5ee05b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Avalanche diodes</topic><topic>Current voltage characteristics</topic><topic>Dark current</topic><topic>Deep trench isolation</topic><topic>Detectors</topic><topic>Electrical properties</topic><topic>Implants</topic><topic>Junctions</topic><topic>LGAD</topic><topic>New technology</topic><topic>pixel segmentation</topic><topic>Pixels</topic><topic>Sensor phenomena and characterization</topic><topic>Sensors</topic><topic>Silicon</topic><topic>trench</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Paternoster, G.</creatorcontrib><creatorcontrib>Borghi, G.</creatorcontrib><creatorcontrib>Boscardin, M.</creatorcontrib><creatorcontrib>Cartiglia, N.</creatorcontrib><creatorcontrib>Ferrero, M.</creatorcontrib><creatorcontrib>Ficorella, F.</creatorcontrib><creatorcontrib>Siviero, F.</creatorcontrib><creatorcontrib>Gola, A.</creatorcontrib><creatorcontrib>Bellutti, P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Paternoster, G.</au><au>Borghi, G.</au><au>Boscardin, M.</au><au>Cartiglia, N.</au><au>Ferrero, M.</au><au>Ficorella, F.</au><au>Siviero, F.</au><au>Gola, A.</au><au>Bellutti, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2020-06-01</date><risdate>2020</risdate><volume>41</volume><issue>6</issue><spage>884</spage><epage>887</epage><pages>884-887</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We present a novel design of fine segmented low gain avalanchediodes ('GAD) based on trench-isolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than 10 μm, from the 20-80 μm of the current 'GAD technology, enabling the production of sensors with small pixel pitch and high fill-factor. Prototypes of this new technologywere produced in the FBK laboratories. Their electrical characterization in terms of I-V, gain measurement and response to a focused laser, indicates that the trenches provide electrical isolation among pixels without any increase in the dark current level and without affecting the gain of the sensor. In addition, I-V measurements of p-i-n diodes with the same trench-isolation structure demonstrate that such termination scheme can withstand more than 500 Volts without reaching breakdown. This is well above the typical operating bias voltage of 'GADs, thus confirming that trench-isolation is a promising solution for finely pixelated 'GAD sensors.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2020.2991351</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-9676-8222</orcidid><orcidid>https://orcid.org/0000-0002-0296-1193</orcidid><orcidid>https://orcid.org/0000-0001-5744-0195</orcidid><orcidid>https://orcid.org/0000-0002-5278-5044</orcidid><orcidid>https://orcid.org/0000-0001-8488-4728</orcidid></addata></record> |
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| subjects | Avalanche diodes Current voltage characteristics Dark current Deep trench isolation Detectors Electrical properties Implants Junctions LGAD New technology pixel segmentation Pixels Sensor phenomena and characterization Sensors Silicon trench |
| title | Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs) |
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