Optimization and Experiments of Lateral Semi-Superjunction Device Based on Normalized Current-Carrying Capability

A lateral double diffused metal oxide semiconductor transistor with the semi-superjunction (semi-SJ LDMOS) is optimized based on the normalized current-carrying capability (CC) and experimentally realized in this letter. The device is fabricated based on an optimized equivalent substrate and the sem...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2019-12, Vol.40 (12), p.1969-1972
Hauptverfasser:	Zhang, Wentong, Wang, Rui, Cheng, Shikang, Gu, SenYan, Zhang, Sen, He, Boyong, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Format:	Artikel
Sprache:	eng
Schlagworte:	breakdown voltage (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V B) Carrier mobility Current carriers Current measurement Doping Metal oxide semiconductors normalized current-carrying capability Optimization semi-SJ LDMOS sp specific on-resistance (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">R ON Substrates Superjunction Transistors Voltage control
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!