Sharp Logic Switch Based on Band Modulation
The capability of Z 2 -FET (Zero Impact Ionization and Zero Subthreshold Slope FET) to operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) technology. The operation mechanism is band-modulation which enables remarkable DC performance in terms of ON/OFF current rat...
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| Veröffentlicht in: | IEEE electron device letters 2019-11, Vol.40 (11), p.1852-1855 |
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| container_issue | 11 |
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| container_title | IEEE electron device letters |
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| creator | Lee, Kyung Hwa El Dirani, Hassan Fonteneau, Pascal Bawedin, Maryline Cristoloveanu, Sorin |
| description | The capability of Z 2 -FET (Zero Impact Ionization and Zero Subthreshold Slope FET) to operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) technology. The operation mechanism is band-modulation which enables remarkable DC performance in terms of ON/OFF current ratio and sharp switch (~1 mV/decade). Z 2 -FETs have successfully been used for ESD protection and capacitorless DRAM memory, but the presence of an inherent hysteresis has handicapped so far logic applications. However, this letter shows that fast pulses on the gate result in hysteresis-free switching: the device turns ON and OFF at same gate bias. The sharpness of the switch depends on device parameters, bias and speed of operation. Systematic experiments compare the performance of Z 2 -FETs with dual or single ground-planes. |
| doi_str_mv | 10.1109/LED.2019.2939665 |
| format | Article |
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The operation mechanism is band-modulation which enables remarkable DC performance in terms of ON/OFF current ratio and sharp switch (~1 mV/decade). Z 2 -FETs have successfully been used for ESD protection and capacitorless DRAM memory, but the presence of an inherent hysteresis has handicapped so far logic applications. However, this letter shows that fast pulses on the gate result in hysteresis-free switching: the device turns ON and OFF at same gate bias. The sharpness of the switch depends on device parameters, bias and speed of operation. Systematic experiments compare the performance of Z 2 -FETs with dual or single ground-planes.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2019.2939665</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Anodes ; band-modulation ; Bias ; dual ground planes ; Electrostatic discharges ; Engineering Sciences ; FD-SOI ; Field effect transistors ; Global Positioning System ; Hysteresis ; Logic ; Logic gates ; Logic switch ; Micro and nanotechnologies ; Microelectronics ; Modulation ; sharp switch ; Sharpness ; SOI ; Switches ; Z²-FET</subject><ispartof>IEEE electron device letters, 2019-11, Vol.40 (11), p.1852-1855</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-727ee9c538f463c22a2eca6b2148089cd0d3c7330c764368c95274be07fa3693</citedby><cites>FETCH-LOGICAL-c325t-727ee9c538f463c22a2eca6b2148089cd0d3c7330c764368c95274be07fa3693</cites><orcidid>0000-0003-4954-5688 ; 0000-0002-3576-5586</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8825998$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8825998$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-04760427$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Kyung Hwa</creatorcontrib><creatorcontrib>El Dirani, Hassan</creatorcontrib><creatorcontrib>Fonteneau, Pascal</creatorcontrib><creatorcontrib>Bawedin, Maryline</creatorcontrib><creatorcontrib>Cristoloveanu, Sorin</creatorcontrib><title>Sharp Logic Switch Based on Band Modulation</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The capability of Z 2 -FET (Zero Impact Ionization and Zero Subthreshold Slope FET) to operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) technology. The operation mechanism is band-modulation which enables remarkable DC performance in terms of ON/OFF current ratio and sharp switch (~1 mV/decade). Z 2 -FETs have successfully been used for ESD protection and capacitorless DRAM memory, but the presence of an inherent hysteresis has handicapped so far logic applications. However, this letter shows that fast pulses on the gate result in hysteresis-free switching: the device turns ON and OFF at same gate bias. The sharpness of the switch depends on device parameters, bias and speed of operation. Systematic experiments compare the performance of Z 2 -FETs with dual or single ground-planes.</description><subject>Anodes</subject><subject>band-modulation</subject><subject>Bias</subject><subject>dual ground planes</subject><subject>Electrostatic discharges</subject><subject>Engineering Sciences</subject><subject>FD-SOI</subject><subject>Field effect transistors</subject><subject>Global Positioning System</subject><subject>Hysteresis</subject><subject>Logic</subject><subject>Logic gates</subject><subject>Logic switch</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Modulation</subject><subject>sharp switch</subject><subject>Sharpness</subject><subject>SOI</subject><subject>Switches</subject><subject>Z²-FET</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wcuCJ5Gtk-_kWGu1woqH9h7SbNZuqZuabCv-e7ds6WmG4XlfhgehWwwjjEE_FdOXEQGsR0RTLQQ_QwPMucqBC3qOBiAZzikGcYmuUloDYMYkG6DH-crGbVaEr9pl89-6davs2SZfZqHplqbMPkK529i2Ds01uqjsJvmb4xyixet0MZnlxefb-2Rc5I4S3uaSSO-141RVTFBHiCXeWbEkmClQ2pVQUicpBScFo0I5zYlkSw-yslRoOkQPfe3Kbsw21t82_plgazMbF-ZwAyYFMCL3uGPve3Ybw8_Op9aswy423XeGUNyJkVixjoKecjGkFH11qsVgDvZMZ88c7JmjvS5y10dq7_0JV4pwrRX9B28FZuA</recordid><startdate>20191101</startdate><enddate>20191101</enddate><creator>Lee, Kyung Hwa</creator><creator>El Dirani, Hassan</creator><creator>Fonteneau, Pascal</creator><creator>Bawedin, Maryline</creator><creator>Cristoloveanu, Sorin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-4954-5688</orcidid><orcidid>https://orcid.org/0000-0002-3576-5586</orcidid></search><sort><creationdate>20191101</creationdate><title>Sharp Logic Switch Based on Band Modulation</title><author>Lee, Kyung Hwa ; El Dirani, Hassan ; Fonteneau, Pascal ; Bawedin, Maryline ; Cristoloveanu, Sorin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-727ee9c538f463c22a2eca6b2148089cd0d3c7330c764368c95274be07fa3693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Anodes</topic><topic>band-modulation</topic><topic>Bias</topic><topic>dual ground planes</topic><topic>Electrostatic discharges</topic><topic>Engineering Sciences</topic><topic>FD-SOI</topic><topic>Field effect transistors</topic><topic>Global Positioning System</topic><topic>Hysteresis</topic><topic>Logic</topic><topic>Logic gates</topic><topic>Logic switch</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Modulation</topic><topic>sharp switch</topic><topic>Sharpness</topic><topic>SOI</topic><topic>Switches</topic><topic>Z²-FET</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Kyung Hwa</creatorcontrib><creatorcontrib>El Dirani, Hassan</creatorcontrib><creatorcontrib>Fonteneau, Pascal</creatorcontrib><creatorcontrib>Bawedin, Maryline</creatorcontrib><creatorcontrib>Cristoloveanu, Sorin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Kyung Hwa</au><au>El Dirani, Hassan</au><au>Fonteneau, Pascal</au><au>Bawedin, Maryline</au><au>Cristoloveanu, Sorin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sharp Logic Switch Based on Band Modulation</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2019-11-01</date><risdate>2019</risdate><volume>40</volume><issue>11</issue><spage>1852</spage><epage>1855</epage><pages>1852-1855</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The capability of Z 2 -FET (Zero Impact Ionization and Zero Subthreshold Slope FET) to operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) technology. The operation mechanism is band-modulation which enables remarkable DC performance in terms of ON/OFF current ratio and sharp switch (~1 mV/decade). Z 2 -FETs have successfully been used for ESD protection and capacitorless DRAM memory, but the presence of an inherent hysteresis has handicapped so far logic applications. However, this letter shows that fast pulses on the gate result in hysteresis-free switching: the device turns ON and OFF at same gate bias. The sharpness of the switch depends on device parameters, bias and speed of operation. Systematic experiments compare the performance of Z 2 -FETs with dual or single ground-planes.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2019.2939665</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-4954-5688</orcidid><orcidid>https://orcid.org/0000-0002-3576-5586</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Anodes band-modulation Bias dual ground planes Electrostatic discharges Engineering Sciences FD-SOI Field effect transistors Global Positioning System Hysteresis Logic Logic gates Logic switch Micro and nanotechnologies Microelectronics Modulation sharp switch Sharpness SOI Switches Z²-FET |
| title | Sharp Logic Switch Based on Band Modulation |
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