Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfO x Memristors

Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfO x Memristors

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Veröffentlicht in:IEEE electron device letters 2019-07, Vol.40 (7), p.1068-1071
Hauptverfasser: Li, Zhaonan, Tian, Baoyi, Xue, Kan-Hao, Wang, Biao, Xu, Ming, Lu, Hong, Sun, Huajun, Miao, Xiangshui
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container_issue 7
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container_title IEEE electron device letters
container_volume 40
creator Li, Zhaonan
Tian, Baoyi
Xue, Kan-Hao
Wang, Biao
Xu, Ming
Lu, Hong
Sun, Huajun
Miao, Xiangshui
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doi_str_mv 10.1109/LED.2019.2917935
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title Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfO x Memristors
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