Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors

Herein, we report the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) as well as its characteristic measurements. The quality of the Ge film was verified by standard elect...

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Veröffentlicht in:	IEEE electron device letters 2019-06, Vol.40 (6), p.945-948
Hauptverfasser:	Hsin, Cheng-Lun, Chou, Chin-Hsien
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Avalanche diodes avalanche photodetectors Buffers CMOS Electrical measurement Germanium Infrared spectra Lighting Microscopy Multiplication Near infrared radiation Optical buffering Photodetectors Photoelectric effect Photoelectric emission Photoelectricity Photometers Raman spectroscopy rapid-melting-growth separate absorption and multiplication Silicon
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