Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors
Herein, we report the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) as well as its characteristic measurements. The quality of the Ge film was verified by standard elect...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2019-06, Vol.40 (6), p.945-948 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 948 |
|---|---|
| container_issue | 6 |
| container_start_page | 945 |
| container_title | IEEE electron device letters |
| container_volume | 40 |
| creator | Hsin, Cheng-Lun Chou, Chin-Hsien |
| description | Herein, we report the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) as well as its characteristic measurements. The quality of the Ge film was verified by standard electron microscopy and Raman spectroscopy. The high-quality Ge functioned as the absorption layer, whereas the multiplication layer was made with the Si layer. The electrical measurement identified that the photodetector shows high responsivity and gain to the near-infrared spectrum before the breakdown. The nanocrystallites and the intermixing SiGe layer at the interface will be the recombination centers for the photogenerated electron-hole pairs, resulting in a low photocurrent in a low-bias range. This letter demonstrated that buffer-free Ge films and SAM APDs with good photoelectric conversion efficiency would be obtained using a CMOS-compatible process. |
| doi_str_mv | 10.1109/LED.2019.2910047 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2019_2910047</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8684897</ieee_id><sourcerecordid>2231870615</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-7fc0892ded14623f0c88411e723b2c8e4acc35e27cc312231365fe4f5249ebe63</originalsourceid><addsrcrecordid>eNo9kF1PwjAUhhujiYjem3jTxOtBv7Z1l4iAJhiN4PXSdacyMtfZdRL-vUWIVyc5eZ_z8SB0S8mIUpKNl7PHESM0G7GMEiLSMzSgcSwjEif8HA1IKmjEKUku0VXXbQmhQqRigHYPvTHgorkDwAsYrypc7PG7aqsSv0Dtq-YTL5zd-Q1eg9401XcP2FiHV9AqpzzgSdFZ1_rKNlg1AeoD1NaVVn-tyY-qVaM3gN821tsSPGhvXXeNLoyqO7g51SH6mM_W06do-bp4nk6WkQ5_-Cg1msiMlVBSkTBuiJZSUAop4wXTEoTSmsfA0lAoY5zyJDYgTMxEBgUkfIjuj3NbZ8Ppnc-3tndNWJkf4jIlCY1DihxT2tmuc2Dy1lVfyu1zSvKD3jzozQ9685PegNwdkQoA_uMykUJmKf8Fial2uA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2231870615</pqid></control><display><type>article</type><title>Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors</title><source>IEEE Electronic Library (IEL)</source><creator>Hsin, Cheng-Lun ; Chou, Chin-Hsien</creator><creatorcontrib>Hsin, Cheng-Lun ; Chou, Chin-Hsien</creatorcontrib><description>Herein, we report the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) as well as its characteristic measurements. The quality of the Ge film was verified by standard electron microscopy and Raman spectroscopy. The high-quality Ge functioned as the absorption layer, whereas the multiplication layer was made with the Si layer. The electrical measurement identified that the photodetector shows high responsivity and gain to the near-infrared spectrum before the breakdown. The nanocrystallites and the intermixing SiGe layer at the interface will be the recombination centers for the photogenerated electron-hole pairs, resulting in a low photocurrent in a low-bias range. This letter demonstrated that buffer-free Ge films and SAM APDs with good photoelectric conversion efficiency would be obtained using a CMOS-compatible process.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2019.2910047</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Absorption ; Avalanche diodes ; avalanche photodetectors ; Buffers ; CMOS ; Electrical measurement ; Germanium ; Infrared spectra ; Lighting ; Microscopy ; Multiplication ; Near infrared radiation ; Optical buffering ; Photodetectors ; Photoelectric effect ; Photoelectric emission ; Photoelectricity ; Photometers ; Raman spectroscopy ; rapid-melting-growth ; separate absorption and multiplication ; Silicon</subject><ispartof>IEEE electron device letters, 2019-06, Vol.40 (6), p.945-948</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-7fc0892ded14623f0c88411e723b2c8e4acc35e27cc312231365fe4f5249ebe63</citedby><cites>FETCH-LOGICAL-c291t-7fc0892ded14623f0c88411e723b2c8e4acc35e27cc312231365fe4f5249ebe63</cites><orcidid>0000-0002-3890-5054</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8684897$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8684897$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hsin, Cheng-Lun</creatorcontrib><creatorcontrib>Chou, Chin-Hsien</creatorcontrib><title>Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Herein, we report the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) as well as its characteristic measurements. The quality of the Ge film was verified by standard electron microscopy and Raman spectroscopy. The high-quality Ge functioned as the absorption layer, whereas the multiplication layer was made with the Si layer. The electrical measurement identified that the photodetector shows high responsivity and gain to the near-infrared spectrum before the breakdown. The nanocrystallites and the intermixing SiGe layer at the interface will be the recombination centers for the photogenerated electron-hole pairs, resulting in a low photocurrent in a low-bias range. This letter demonstrated that buffer-free Ge films and SAM APDs with good photoelectric conversion efficiency would be obtained using a CMOS-compatible process.</description><subject>Absorption</subject><subject>Avalanche diodes</subject><subject>avalanche photodetectors</subject><subject>Buffers</subject><subject>CMOS</subject><subject>Electrical measurement</subject><subject>Germanium</subject><subject>Infrared spectra</subject><subject>Lighting</subject><subject>Microscopy</subject><subject>Multiplication</subject><subject>Near infrared radiation</subject><subject>Optical buffering</subject><subject>Photodetectors</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photoelectricity</subject><subject>Photometers</subject><subject>Raman spectroscopy</subject><subject>rapid-melting-growth</subject><subject>separate absorption and multiplication</subject><subject>Silicon</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1PwjAUhhujiYjem3jTxOtBv7Z1l4iAJhiN4PXSdacyMtfZdRL-vUWIVyc5eZ_z8SB0S8mIUpKNl7PHESM0G7GMEiLSMzSgcSwjEif8HA1IKmjEKUku0VXXbQmhQqRigHYPvTHgorkDwAsYrypc7PG7aqsSv0Dtq-YTL5zd-Q1eg9401XcP2FiHV9AqpzzgSdFZ1_rKNlg1AeoD1NaVVn-tyY-qVaM3gN821tsSPGhvXXeNLoyqO7g51SH6mM_W06do-bp4nk6WkQ5_-Cg1msiMlVBSkTBuiJZSUAop4wXTEoTSmsfA0lAoY5zyJDYgTMxEBgUkfIjuj3NbZ8Ppnc-3tndNWJkf4jIlCY1DihxT2tmuc2Dy1lVfyu1zSvKD3jzozQ9685PegNwdkQoA_uMykUJmKf8Fial2uA</recordid><startdate>20190601</startdate><enddate>20190601</enddate><creator>Hsin, Cheng-Lun</creator><creator>Chou, Chin-Hsien</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3890-5054</orcidid></search><sort><creationdate>20190601</creationdate><title>Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors</title><author>Hsin, Cheng-Lun ; Chou, Chin-Hsien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-7fc0892ded14623f0c88411e723b2c8e4acc35e27cc312231365fe4f5249ebe63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Absorption</topic><topic>Avalanche diodes</topic><topic>avalanche photodetectors</topic><topic>Buffers</topic><topic>CMOS</topic><topic>Electrical measurement</topic><topic>Germanium</topic><topic>Infrared spectra</topic><topic>Lighting</topic><topic>Microscopy</topic><topic>Multiplication</topic><topic>Near infrared radiation</topic><topic>Optical buffering</topic><topic>Photodetectors</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photoelectricity</topic><topic>Photometers</topic><topic>Raman spectroscopy</topic><topic>rapid-melting-growth</topic><topic>separate absorption and multiplication</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsin, Cheng-Lun</creatorcontrib><creatorcontrib>Chou, Chin-Hsien</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsin, Cheng-Lun</au><au>Chou, Chin-Hsien</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2019-06-01</date><risdate>2019</risdate><volume>40</volume><issue>6</issue><spage>945</spage><epage>948</epage><pages>945-948</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Herein, we report the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) as well as its characteristic measurements. The quality of the Ge film was verified by standard electron microscopy and Raman spectroscopy. The high-quality Ge functioned as the absorption layer, whereas the multiplication layer was made with the Si layer. The electrical measurement identified that the photodetector shows high responsivity and gain to the near-infrared spectrum before the breakdown. The nanocrystallites and the intermixing SiGe layer at the interface will be the recombination centers for the photogenerated electron-hole pairs, resulting in a low photocurrent in a low-bias range. This letter demonstrated that buffer-free Ge films and SAM APDs with good photoelectric conversion efficiency would be obtained using a CMOS-compatible process.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2019.2910047</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-3890-5054</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2019-06, Vol.40 (6), p.945-948 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_LED_2019_2910047 |
| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Avalanche diodes avalanche photodetectors Buffers CMOS Electrical measurement Germanium Infrared spectra Lighting Microscopy Multiplication Near infrared radiation Optical buffering Photodetectors Photoelectric effect Photoelectric emission Photoelectricity Photometers Raman spectroscopy rapid-melting-growth separate absorption and multiplication Silicon |
| title | Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T16%3A30%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Buffer-Free%20Ge/Si%20by%20Rapid%20Melting%20Growth%20Technique%20for%20Separate%20Absorption%20and%20Multiplication%20Avalanche%20Photodetectors&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Hsin,%20Cheng-Lun&rft.date=2019-06-01&rft.volume=40&rft.issue=6&rft.spage=945&rft.epage=948&rft.pages=945-948&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2019.2910047&rft_dat=%3Cproquest_RIE%3E2231870615%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2231870615&rft_id=info:pmid/&rft_ieee_id=8684897&rfr_iscdi=true |