Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node

This letter discusses the hot carrier stress (HCS) degradation mechanisms for different gate voltages ( \text{V}_{\textsf {G}} ) in FinFET devices, and finds the abnormal relationship between HCS degradation and body current under high \text{V}_{\textsf {G}} . According to the distributions of life...

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Veröffentlicht in:	IEEE electron device letters 2019-04, Vol.40 (4), p.498-501
Hauptverfasser:	Chang, Kai-Chun, Liao, Jih-Chien, Chang, Ting-Chang, Yeh, Chien-Hung, Lin, Chien-Yu, Jin, Fu-Yuan, Lin, Yu-Shan, Ciou, Fong-Min, Hung, Wei-Chun, Lin, Yun-Hsuan, Lien, Chen-Hsin, Cheng, Osbert, Huang, Cheng-Tung, Ye, Yi-Han
Format:	Artikel
Sprache:	eng
Schlagworte:	Body current Carrier density Degradation Electric fields Excitation FinFETs Hot carriers Ionization Logic gates MVE Scattering Stress
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