ESD-Reliability Enhancement of Circular UHV 300-V Power nLDMOS by the Drain-side Superjunction Structure

For circular ultra-high voltage (UHV) 300-V power nLDMOS devices, a novel device architecture of high voltage p-well (HVPW) zones is embedded into a high voltage n-well (HVNW) drift region to form superjunction (SJ) structures (radial-type). And, by the HVPW/HVNW SJ of the radial-type, eight types o...

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Veröffentlicht in:	IEEE electron device letters 2019-04, Vol.40 (4), p.597-600
Hauptverfasser:	Chen, Shen-Li, Wu, Pei-Lin, Lin, Po-Lin
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer architecture Electric potential Electrostatic discharge (ESD) Electrostatic discharges High voltages human-body model (HBM) Junctions Layout Logic gates MOSFET n-channel lateral-diffused MOSFET (nLDMOS) Partitions Reliability Robustness superjunction (SJ) structure Testing ultra high-voltage (UHV)
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