The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors

The influence of anion composition on the electrical characteristics of amorphous zinc-oxynitride thin-film transitors (TFTs) is investigated and quantitatively modeled, with emphasis on the subgap density of states (DOS). As the ratio of N to (N + O) increases, the density of valence band tail stat...

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Veröffentlicht in:	IEEE electron device letters 2019-01, Vol.40 (1), p.40-43
Hauptverfasser:	Jang, Jun Tae, Kang, Hara, Yu, Hye Ri, Kim, Eok Su, Son, Kyoung Seok, Cho, Seong-Ho, Kim, Dong Myong, Choi, Sung-Jin, Kim, Dae Hwan
Format:	Artikel
Sprache:	eng
Schlagworte:	Anion composition Anions Carrier density Composition Conduction bands Density of states Dependence Electric variables II-VI semiconductor materials Ions Iron Nitrogen Photonic band gap Semiconductor devices subgap density of states Thin film transistors Transconductance Valence band Zinc oxide ZnON
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