Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

In oxide-based resistive switching memory (OxRAM), due to the existence of oxygen ions, electron-induced random telegraph noise (e-RTN) and oxygen ion-induced RTN (GR-RTN) coexist and cannot be distinguished directly from the current levels in typical two-level RTN signals. Thus, the accurate extrac...

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Veröffentlicht in:	IEEE electron device letters 2018-09, Vol.39 (9), p.1302-1305
Hauptverfasser:	Gong, Tiancheng, Luo, Qing, Xu, Xiaoxin, Yu, Jie, Dong, Danian, Lv, Hangbing, Yuan, Peng, Chen, Chuanbing, Yin, Jiahao, Tai, Lu, Zhu, Xi, Liu, Qi, Long, Shibing, Liu, Ming
Format:	Artikel
Sprache:	eng
Schlagworte:	Electron traps Energy levels Energy states Ions Mathematical model Microelectronics OxRAM Oxygen ions random telegraph noise (RTN) Reliability Switches Switching Time dependence
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