High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading...

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Veröffentlicht in:	IEEE electron device letters 2018-07, Vol.39 (7), p.991-994
Hauptverfasser:	Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN Aluminum oxide charge trap gate stack Conduction bands Electron mobility Electron traps enhancement-mode Ferroelectric materials Ferroelectricity Gallium nitride Gallium nitrides Hafnium compounds HEMTs High electron mobility transistors Insulators Iron Logic gates metal-insulator-semiconductor (MIS)-HEMT MIS (semiconductors) normally-OFF Polarization Semiconductor devices Stability Threshold voltage
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