High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2018-07, Vol.39 (7), p.991-994 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 994 |
|---|---|
| container_issue | 7 |
| container_start_page | 991 |
| container_title | IEEE electron device letters |
| container_volume | 39 |
| creator | Chia-Hsun Wu Ping-Cheng Han Shih-Chien Liu Ting-En Hsieh Lumbantoruan, Franky Juanda Yu-Hsuan Ho Jian-You Chen Kun-Sheng Yang Huan-Chung Wang Yen-Ku Lin Po-Chun Chang Quang Ho Luc Yueh-Chin Lin Chang, Edward Yi |
| description | A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V th ) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V th of +2.71 V at I Dh = 1μA/mm, a high maximum current density of 820 mA/mm and low on-resistance (R ON ) of 11.1 Ω · mm. The FE device also shows good V th -temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application. |
| doi_str_mv | 10.1109/LED.2018.2825645 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2018_2825645</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8335818</ieee_id><sourcerecordid>2061429713</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-f62e259d52f89e170463b08713100d32e2e51f9f6dcd0038d503aa57736c0fd93</originalsourceid><addsrcrecordid>eNo9kM1OwzAQhC0EEuXnjsTFEhc4pKztOHGOqG1apAKV2p4j19kUQ2iCHUB9AZ4blyJOu9LON6MdQi4Y9BmD7HY6GvY5MNXnissklgekx6RUEchEHJIepDGLBIPkmJx4_wLA4jiNe-R7YtfP0Qxd1bg3vTFIH3dLXW-jpzynY_1IH-7n0WT0sPB06e1mTSfblbMlzdG5Bms0nbOGDp61WyNdON0GqEM677R5pdf5aPwL39AQQGfNFzo6xE8bgu7atrZGd7bZ-DNyVOna4_nfPCXLfLQYTKLp0_h-cDeNDM9YF1UJRy6zUvJKZchSiBOxApWy8BmUIhxRsiqrktKUAEKVEoTWMk1FYqAqM3FKrva-rWveP9B3xUvz4TYhsuCQsJhnwSuoYK8yrvHeYVW0zr5pty0YFLu2i9B2sWu7-Gs7IJd7xCLiv1wJIRVT4gcBdHha</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2061429713</pqid></control><display><type>article</type><title>High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications</title><source>IEEE Electronic Library (IEL)</source><creator>Chia-Hsun Wu ; Ping-Cheng Han ; Shih-Chien Liu ; Ting-En Hsieh ; Lumbantoruan, Franky Juanda ; Yu-Hsuan Ho ; Jian-You Chen ; Kun-Sheng Yang ; Huan-Chung Wang ; Yen-Ku Lin ; Po-Chun Chang ; Quang Ho Luc ; Yueh-Chin Lin ; Chang, Edward Yi</creator><creatorcontrib>Chia-Hsun Wu ; Ping-Cheng Han ; Shih-Chien Liu ; Ting-En Hsieh ; Lumbantoruan, Franky Juanda ; Yu-Hsuan Ho ; Jian-You Chen ; Kun-Sheng Yang ; Huan-Chung Wang ; Yen-Ku Lin ; Po-Chun Chang ; Quang Ho Luc ; Yueh-Chin Lin ; Chang, Edward Yi</creatorcontrib><description>A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V th ) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V th of +2.71 V at I Dh = 1μA/mm, a high maximum current density of 820 mA/mm and low on-resistance (R ON ) of 11.1 Ω · mm. The FE device also shows good V th -temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2018.2825645</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>AlGaN/GaN ; Aluminum oxide ; charge trap gate stack ; Conduction bands ; Electron mobility ; Electron traps ; enhancement-mode ; Ferroelectric materials ; Ferroelectricity ; Gallium nitride ; Gallium nitrides ; Hafnium compounds ; HEMTs ; High electron mobility transistors ; Insulators ; Iron ; Logic gates ; metal-insulator-semiconductor (MIS)-HEMT ; MIS (semiconductors) ; normally-OFF ; Polarization ; Semiconductor devices ; Stability ; Threshold voltage</subject><ispartof>IEEE electron device letters, 2018-07, Vol.39 (7), p.991-994</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-f62e259d52f89e170463b08713100d32e2e51f9f6dcd0038d503aa57736c0fd93</citedby><cites>FETCH-LOGICAL-c291t-f62e259d52f89e170463b08713100d32e2e51f9f6dcd0038d503aa57736c0fd93</cites><orcidid>0000-0002-0089-293X ; 0000-0001-6420-1598 ; 0000-0003-4513-1824 ; 0000-0002-5333-267X ; 0000-0002-1843-5307 ; 0000-0001-6088-0968 ; 0000-0001-6683-9317 ; 0000-0003-1616-5240 ; 0000-0001-7733-2829 ; 0000-0002-3692-5190</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8335818$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8335818$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chia-Hsun Wu</creatorcontrib><creatorcontrib>Ping-Cheng Han</creatorcontrib><creatorcontrib>Shih-Chien Liu</creatorcontrib><creatorcontrib>Ting-En Hsieh</creatorcontrib><creatorcontrib>Lumbantoruan, Franky Juanda</creatorcontrib><creatorcontrib>Yu-Hsuan Ho</creatorcontrib><creatorcontrib>Jian-You Chen</creatorcontrib><creatorcontrib>Kun-Sheng Yang</creatorcontrib><creatorcontrib>Huan-Chung Wang</creatorcontrib><creatorcontrib>Yen-Ku Lin</creatorcontrib><creatorcontrib>Po-Chun Chang</creatorcontrib><creatorcontrib>Quang Ho Luc</creatorcontrib><creatorcontrib>Yueh-Chin Lin</creatorcontrib><creatorcontrib>Chang, Edward Yi</creatorcontrib><title>High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V th ) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V th of +2.71 V at I Dh = 1μA/mm, a high maximum current density of 820 mA/mm and low on-resistance (R ON ) of 11.1 Ω · mm. The FE device also shows good V th -temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.</description><subject>AlGaN/GaN</subject><subject>Aluminum oxide</subject><subject>charge trap gate stack</subject><subject>Conduction bands</subject><subject>Electron mobility</subject><subject>Electron traps</subject><subject>enhancement-mode</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Hafnium compounds</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Insulators</subject><subject>Iron</subject><subject>Logic gates</subject><subject>metal-insulator-semiconductor (MIS)-HEMT</subject><subject>MIS (semiconductors)</subject><subject>normally-OFF</subject><subject>Polarization</subject><subject>Semiconductor devices</subject><subject>Stability</subject><subject>Threshold voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1OwzAQhC0EEuXnjsTFEhc4pKztOHGOqG1apAKV2p4j19kUQ2iCHUB9AZ4blyJOu9LON6MdQi4Y9BmD7HY6GvY5MNXnissklgekx6RUEchEHJIepDGLBIPkmJx4_wLA4jiNe-R7YtfP0Qxd1bg3vTFIH3dLXW-jpzynY_1IH-7n0WT0sPB06e1mTSfblbMlzdG5Bms0nbOGDp61WyNdON0GqEM677R5pdf5aPwL39AQQGfNFzo6xE8bgu7atrZGd7bZ-DNyVOna4_nfPCXLfLQYTKLp0_h-cDeNDM9YF1UJRy6zUvJKZchSiBOxApWy8BmUIhxRsiqrktKUAEKVEoTWMk1FYqAqM3FKrva-rWveP9B3xUvz4TYhsuCQsJhnwSuoYK8yrvHeYVW0zr5pty0YFLu2i9B2sWu7-Gs7IJd7xCLiv1wJIRVT4gcBdHha</recordid><startdate>20180701</startdate><enddate>20180701</enddate><creator>Chia-Hsun Wu</creator><creator>Ping-Cheng Han</creator><creator>Shih-Chien Liu</creator><creator>Ting-En Hsieh</creator><creator>Lumbantoruan, Franky Juanda</creator><creator>Yu-Hsuan Ho</creator><creator>Jian-You Chen</creator><creator>Kun-Sheng Yang</creator><creator>Huan-Chung Wang</creator><creator>Yen-Ku Lin</creator><creator>Po-Chun Chang</creator><creator>Quang Ho Luc</creator><creator>Yueh-Chin Lin</creator><creator>Chang, Edward Yi</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0089-293X</orcidid><orcidid>https://orcid.org/0000-0001-6420-1598</orcidid><orcidid>https://orcid.org/0000-0003-4513-1824</orcidid><orcidid>https://orcid.org/0000-0002-5333-267X</orcidid><orcidid>https://orcid.org/0000-0002-1843-5307</orcidid><orcidid>https://orcid.org/0000-0001-6088-0968</orcidid><orcidid>https://orcid.org/0000-0001-6683-9317</orcidid><orcidid>https://orcid.org/0000-0003-1616-5240</orcidid><orcidid>https://orcid.org/0000-0001-7733-2829</orcidid><orcidid>https://orcid.org/0000-0002-3692-5190</orcidid></search><sort><creationdate>20180701</creationdate><title>High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications</title><author>Chia-Hsun Wu ; Ping-Cheng Han ; Shih-Chien Liu ; Ting-En Hsieh ; Lumbantoruan, Franky Juanda ; Yu-Hsuan Ho ; Jian-You Chen ; Kun-Sheng Yang ; Huan-Chung Wang ; Yen-Ku Lin ; Po-Chun Chang ; Quang Ho Luc ; Yueh-Chin Lin ; Chang, Edward Yi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-f62e259d52f89e170463b08713100d32e2e51f9f6dcd0038d503aa57736c0fd93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>AlGaN/GaN</topic><topic>Aluminum oxide</topic><topic>charge trap gate stack</topic><topic>Conduction bands</topic><topic>Electron mobility</topic><topic>Electron traps</topic><topic>enhancement-mode</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>Hafnium compounds</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Insulators</topic><topic>Iron</topic><topic>Logic gates</topic><topic>metal-insulator-semiconductor (MIS)-HEMT</topic><topic>MIS (semiconductors)</topic><topic>normally-OFF</topic><topic>Polarization</topic><topic>Semiconductor devices</topic><topic>Stability</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chia-Hsun Wu</creatorcontrib><creatorcontrib>Ping-Cheng Han</creatorcontrib><creatorcontrib>Shih-Chien Liu</creatorcontrib><creatorcontrib>Ting-En Hsieh</creatorcontrib><creatorcontrib>Lumbantoruan, Franky Juanda</creatorcontrib><creatorcontrib>Yu-Hsuan Ho</creatorcontrib><creatorcontrib>Jian-You Chen</creatorcontrib><creatorcontrib>Kun-Sheng Yang</creatorcontrib><creatorcontrib>Huan-Chung Wang</creatorcontrib><creatorcontrib>Yen-Ku Lin</creatorcontrib><creatorcontrib>Po-Chun Chang</creatorcontrib><creatorcontrib>Quang Ho Luc</creatorcontrib><creatorcontrib>Yueh-Chin Lin</creatorcontrib><creatorcontrib>Chang, Edward Yi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chia-Hsun Wu</au><au>Ping-Cheng Han</au><au>Shih-Chien Liu</au><au>Ting-En Hsieh</au><au>Lumbantoruan, Franky Juanda</au><au>Yu-Hsuan Ho</au><au>Jian-You Chen</au><au>Kun-Sheng Yang</au><au>Huan-Chung Wang</au><au>Yen-Ku Lin</au><au>Po-Chun Chang</au><au>Quang Ho Luc</au><au>Yueh-Chin Lin</au><au>Chang, Edward Yi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2018-07-01</date><risdate>2018</risdate><volume>39</volume><issue>7</issue><spage>991</spage><epage>994</epage><pages>991-994</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V th ) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V th of +2.71 V at I Dh = 1μA/mm, a high maximum current density of 820 mA/mm and low on-resistance (R ON ) of 11.1 Ω · mm. The FE device also shows good V th -temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2018.2825645</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-0089-293X</orcidid><orcidid>https://orcid.org/0000-0001-6420-1598</orcidid><orcidid>https://orcid.org/0000-0003-4513-1824</orcidid><orcidid>https://orcid.org/0000-0002-5333-267X</orcidid><orcidid>https://orcid.org/0000-0002-1843-5307</orcidid><orcidid>https://orcid.org/0000-0001-6088-0968</orcidid><orcidid>https://orcid.org/0000-0001-6683-9317</orcidid><orcidid>https://orcid.org/0000-0003-1616-5240</orcidid><orcidid>https://orcid.org/0000-0001-7733-2829</orcidid><orcidid>https://orcid.org/0000-0002-3692-5190</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2018-07, Vol.39 (7), p.991-994 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_LED_2018_2825645 |
| source | IEEE Electronic Library (IEL) |
| subjects | AlGaN/GaN Aluminum oxide charge trap gate stack Conduction bands Electron mobility Electron traps enhancement-mode Ferroelectric materials Ferroelectricity Gallium nitride Gallium nitrides Hafnium compounds HEMTs High electron mobility transistors Insulators Iron Logic gates metal-insulator-semiconductor (MIS)-HEMT MIS (semiconductors) normally-OFF Polarization Semiconductor devices Stability Threshold voltage |
| title | High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T18%3A01%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Performance%20Normally-OFF%20GaN%20MIS-HEMTs%20Using%20Hybrid%20Ferroelectric%20Charge%20Trap%20Gate%20Stack%20(FEG-HEMT)%20for%20Power%20Device%20Applications&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Chia-Hsun%20Wu&rft.date=2018-07-01&rft.volume=39&rft.issue=7&rft.spage=991&rft.epage=994&rft.pages=991-994&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2018.2825645&rft_dat=%3Cproquest_RIE%3E2061429713%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2061429713&rft_id=info:pmid/&rft_ieee_id=8335818&rfr_iscdi=true |