$Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 \text^/\text \cdot \text for High-Speed Operation$

Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 \text^/\text \cdot \text for High-Speed Operation

We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2 \text{cm}^{2}/\text{V} \cdot \text{s} , threshold voltage of 0.5 V, and subthreshold swing of 0.15 V/decade were obtained with a thin IZO-inser...

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Veröffentlicht in:	IEEE electron device letters 2018-04, Vol.39 (4), p.508-511
Hauptverfasser:	Yang, Jong-Heon, Choi, Ji Hun, Cho, Sung Haeng, Pi, Jae-Eun, Kim, Hee-Ok, Hwang, Chi-Sun, Park, Keechan, Yoo, Seunghyup
Format:	Artikel
Sprache:	eng
Schlagworte:	AlInZnSnO Annealing back channel etch Circuit stability double layer high mobility InZnO Iron Logic gates oxide TFT Ring oscillators Stress Thin film transistor Thin film transistors
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