Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN PIN Diodes

Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature b...

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Veröffentlicht in:	IEEE electron device letters 2017-07, Vol.38 (7), p.945-948
Hauptverfasser:	Collins, K. C., King, M. P., Dickerson, J. R., Vizkelethy, G., Armstrong, A. M., Fischer, A. J., Allerman, A. A., Kaplar, R. J., Aktas, O., Kizilyalli, I. C., Talin, A. A., Leonard, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes EBIC edge termination Gallium nitride Image edge detection Laboratories PHYSICS OF ELEMENTARY PARTICLES AND FIELDS PIN photodiodes Power electronics Protons Radiation effects wide bandgap
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