A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study

A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study

A superjunction MOSFET (SJ-MOSFET) with a new fully close-packed hexagonal pattern for its superjunction (SJ) region is proposed. According to TCAD simulation, the proposed device can accommodate highly doped n-pillars with no significant degradation of its blocking voltage (BV), where its conventio...

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Veröffentlicht in:IEEE electron device letters 2017-01, Vol.38 (1), p.111-114
Hauptverfasser: Park, Jaehoon, Lee, Jong-Ho
Format: Artikel
Sprache:eng
Schlagworte:
Doping
Electric fields
High voltage
HV power MOSFET
Integrated circuits
MOSFET
power device
Power semiconductor devices
Resilience
Silicon
super-junction MOSFET
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description A superjunction MOSFET (SJ-MOSFET) with a new fully close-packed hexagonal pattern for its superjunction (SJ) region is proposed. According to TCAD simulation, the proposed device can accommodate highly doped n-pillars with no significant degradation of its blocking voltage (BV), where its conventional counterpart, a SJ-MOSFET with a stripe-patterned SJ region is incapable of. In comparison with the conventional device, the proposed device shows dramatic reduction of ON-resistance down by 41% while keeping its BV of 650 V. The proposed device also shows superior BV resilience to charge imbalance than the conventional device.
doi_str_mv 10.1109/LED.2016.2631619
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subjects Doping
Electric fields
High voltage
HV power MOSFET
Integrated circuits
MOSFET
power device
Power semiconductor devices
Resilience
Silicon
super-junction MOSFET
title A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study
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