High Performance and Electro-Mechanical Stability in Small Molecule: Polymer Blend Flexible Organic Field-Effect Transistors
High-performance solution processed flexible organic field-effect transistors with 6,13(bis-triisopropylsily-lethynyl) pentacene and polystyrene blend are demonstrated with high electro-mechanical stability. For -5 V operation, field-effect mobility up to 1.1 cm 2 V -1 s -1 and threshold voltage as...
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Veröffentlicht in: | IEEE electron device letters 2016-09, Vol.37 (9), p.1215-1218 |
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creator | Bharti, Deepak Raghuwanshi, Vivek Varun, Ishan Mahato, Ajay Kumar Tiwari, Shree Prakash |
description | High-performance solution processed flexible organic field-effect transistors with 6,13(bis-triisopropylsily-lethynyl) pentacene and polystyrene blend are demonstrated with high electro-mechanical stability. For -5 V operation, field-effect mobility up to 1.1 cm 2 V -1 s -1 and threshold voltage as low as -0.1 V were obtained with high current on-off ratios of ~10 5 due to high quality dielectric-semiconductor interface developed during solvent evaporation. Stable electrical characteristics were achieved with increasing duration of mechanical strain, and after multiple cycles of tensile and compressive strain. Drain current decay of 10%, very large trapping time of ~10 8 s, and a very small threshold voltage shift of 0.3 V were observed during bias stress of 1 h, signifying low charge carrier trapping and a high quality of dielectric-semiconductor interface, which was retained largely after two days of continuous tensile strain. Moreover, after 100 cycles of tensile and compressive strain, the corresponding shift in threshold voltage due to bias stress was still ~0.5 V. Overall, a high performance and stability were demonstrated under collective effects of mechanical and electrical stress. |
doi_str_mv | 10.1109/LED.2016.2592943 |
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For -5 V operation, field-effect mobility up to 1.1 cm 2 V -1 s -1 and threshold voltage as low as -0.1 V were obtained with high current on-off ratios of ~10 5 due to high quality dielectric-semiconductor interface developed during solvent evaporation. Stable electrical characteristics were achieved with increasing duration of mechanical strain, and after multiple cycles of tensile and compressive strain. Drain current decay of 10%, very large trapping time of ~10 8 s, and a very small threshold voltage shift of 0.3 V were observed during bias stress of 1 h, signifying low charge carrier trapping and a high quality of dielectric-semiconductor interface, which was retained largely after two days of continuous tensile strain. Moreover, after 100 cycles of tensile and compressive strain, the corresponding shift in threshold voltage due to bias stress was still ~0.5 V. Overall, a high performance and stability were demonstrated under collective effects of mechanical and electrical stress.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2016.2592943</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>bending ; bias-stress ; Charge carrier processes ; Compressive properties ; Crystals ; Field effect transistors ; flexible electronics ; mechanical stability ; OFETs ; Organic field-effect transistors (OFETs) ; Performance evaluation ; Polymer blends ; Stability ; Strain ; Stress ; Stresses ; Threshold voltage ; TIPS-pentacene:polymer blend ; Trapping</subject><ispartof>IEEE electron device letters, 2016-09, Vol.37 (9), p.1215-1218</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-f06a04b51759f2d8e7afa91dc70f2528e2cd874cbdbca8a88a7e983ae13a4b953</citedby><cites>FETCH-LOGICAL-c324t-f06a04b51759f2d8e7afa91dc70f2528e2cd874cbdbca8a88a7e983ae13a4b953</cites><orcidid>0000-0001-8907-6113</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7516678$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7516678$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bharti, Deepak</creatorcontrib><creatorcontrib>Raghuwanshi, Vivek</creatorcontrib><creatorcontrib>Varun, Ishan</creatorcontrib><creatorcontrib>Mahato, Ajay Kumar</creatorcontrib><creatorcontrib>Tiwari, Shree Prakash</creatorcontrib><title>High Performance and Electro-Mechanical Stability in Small Molecule: Polymer Blend Flexible Organic Field-Effect Transistors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>High-performance solution processed flexible organic field-effect transistors with 6,13(bis-triisopropylsily-lethynyl) pentacene and polystyrene blend are demonstrated with high electro-mechanical stability. For -5 V operation, field-effect mobility up to 1.1 cm 2 V -1 s -1 and threshold voltage as low as -0.1 V were obtained with high current on-off ratios of ~10 5 due to high quality dielectric-semiconductor interface developed during solvent evaporation. Stable electrical characteristics were achieved with increasing duration of mechanical strain, and after multiple cycles of tensile and compressive strain. Drain current decay of 10%, very large trapping time of ~10 8 s, and a very small threshold voltage shift of 0.3 V were observed during bias stress of 1 h, signifying low charge carrier trapping and a high quality of dielectric-semiconductor interface, which was retained largely after two days of continuous tensile strain. Moreover, after 100 cycles of tensile and compressive strain, the corresponding shift in threshold voltage due to bias stress was still ~0.5 V. Overall, a high performance and stability were demonstrated under collective effects of mechanical and electrical stress.</description><subject>bending</subject><subject>bias-stress</subject><subject>Charge carrier processes</subject><subject>Compressive properties</subject><subject>Crystals</subject><subject>Field effect transistors</subject><subject>flexible electronics</subject><subject>mechanical stability</subject><subject>OFETs</subject><subject>Organic field-effect transistors (OFETs)</subject><subject>Performance evaluation</subject><subject>Polymer blends</subject><subject>Stability</subject><subject>Strain</subject><subject>Stress</subject><subject>Stresses</subject><subject>Threshold voltage</subject><subject>TIPS-pentacene:polymer blend</subject><subject>Trapping</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkc9rFDEUx4MouFbvgpeAFy-z5ncy3rTuWmFLC63n4U3mpU3JTGoyC13wj3eWLR48vcvn8-XBh5D3nK05Z-3n3eb7WjBu1kK3olXyBVlxrV3DtJEvyYpZxRvJmXlN3tT6wBhXyqoV-XMR7-7pNZaQywiTRwrTQDcJ_Vxyc4n-HqboIdGbGfqY4nygcaI3I6REL_OC7RN-odc5HUYs9FvCxd4mfIp9QnpV7o423UZMQ7MJYVmltwWmGuucS31LXgVIFd893zPya7u5Pb9odlc_fp5_3TVeCjU3gRlgqtfc6jaIwaGFAC0fvGVBaOFQ-MFZ5fuh9-DAObDYOgnIJai-1fKMfDrtPpb8e4917sZYPaYEE-Z97biT2gitzRH9-B_6kPdlWr5bKK6EtMy0C8VOlC-51oKheyxxhHLoOOuOObolR3fM0T3nWJQPJyUi4j_cam6MdfIvsUaG7w</recordid><startdate>201609</startdate><enddate>201609</enddate><creator>Bharti, Deepak</creator><creator>Raghuwanshi, Vivek</creator><creator>Varun, Ishan</creator><creator>Mahato, Ajay Kumar</creator><creator>Tiwari, Shree Prakash</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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For -5 V operation, field-effect mobility up to 1.1 cm 2 V -1 s -1 and threshold voltage as low as -0.1 V were obtained with high current on-off ratios of ~10 5 due to high quality dielectric-semiconductor interface developed during solvent evaporation. Stable electrical characteristics were achieved with increasing duration of mechanical strain, and after multiple cycles of tensile and compressive strain. Drain current decay of 10%, very large trapping time of ~10 8 s, and a very small threshold voltage shift of 0.3 V were observed during bias stress of 1 h, signifying low charge carrier trapping and a high quality of dielectric-semiconductor interface, which was retained largely after two days of continuous tensile strain. Moreover, after 100 cycles of tensile and compressive strain, the corresponding shift in threshold voltage due to bias stress was still ~0.5 V. 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subjects | bending bias-stress Charge carrier processes Compressive properties Crystals Field effect transistors flexible electronics mechanical stability OFETs Organic field-effect transistors (OFETs) Performance evaluation Polymer blends Stability Strain Stress Stresses Threshold voltage TIPS-pentacene:polymer blend Trapping |
title | High Performance and Electro-Mechanical Stability in Small Molecule: Polymer Blend Flexible Organic Field-Effect Transistors |
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