Ambipolar Black Phosphorus MOSFETs With Record n-Channel Transconductance

Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO 2 gate dielectric. Before passivation, devices with 0.3-μm gate length behaved as p-MOSFETs...

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Veröffentlicht in:	IEEE electron device letters 2016-01, Vol.37 (1), p.103-106
Hauptverfasser:	Haratipour, Nazila, Koester, Steven J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Dielectrics Electrodes Gates Hafnium oxide Logic gates MOSFET MOSFET circuits MOSFETs Passivation Phosphorus Transconductance
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creator	Haratipour, Nazila Koester, Steven J.
description	Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO 2 gate dielectric. Before passivation, devices with 0.3-μm gate length behaved as p-MOSFETs with peak extrinsic transconductance, g m , of 282 μS/μm at V DS = -2 V. After passivation, the same devices displayed the ambipolar behavior, and when tested as n-MOSFETs, had peak g m = 66 μS/μm at V DS = +2 V, and similar devices on the same wafer had g m as high as 80 μS/μm. These results are an important step toward the realization of high-performance black phosphorus complementary logic circuits.
doi_str_mv	10.1109/LED.2015.2499209
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The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO 2 gate dielectric. Before passivation, devices with 0.3-μm gate length behaved as p-MOSFETs with peak extrinsic transconductance, g m , of 282 μS/μm at V DS = -2 V. After passivation, the same devices displayed the ambipolar behavior, and when tested as n-MOSFETs, had peak g m = 66 μS/μm at V DS = +2 V, and similar devices on the same wafer had g m as high as 80 μS/μm. 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subjects	Devices Dielectrics Electrodes Gates Hafnium oxide Logic gates MOSFET MOSFET circuits MOSFETs Passivation Phosphorus Transconductance
title	Ambipolar Black Phosphorus MOSFETs With Record n-Channel Transconductance
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