Impact of Residual Hardmask Wires on the Performance of Film-Profile-Engineered ZnO Thin-Film Transistors With Discrete Bottom Gates

Root cause for the anomalous degradation in the ON-current of film-profile-engineered ZnO thin-film transistors with discrete bottom gates, a new scheme proposed in our previous work, is investigated. Our findings indicate that the deposited source/drain (S/D) metal contact pads are disconnected owi...

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Veröffentlicht in:	IEEE electron device letters 2015-08, Vol.36 (8), p.796-798
Hauptverfasser:	Rong-Jhe Lyu, Horng-Chih Lin, Tiao-Yuan Huang
Format:	Artikel
Sprache:	eng
Schlagworte:	film profile engineering (FPE) II-VI semiconductor materials Logic gates Metal oxides Thin film transistors thin-film transistor Tin Wires Zinc oxide ZnO
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